Fabrication of 10-Nanometer-Scale Gaas Dot Structures by in sItu Selective Gas Etching with Self-Assembled Inas Dots as a Mask

Go Yus A, Hiroshi Noge, Yutaka Kadoya, Takao Someya, Tadatomo Suga, Pierre Petroff, Hiroyuki Sakaki

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report on a novel method of fabricating 10-nm-scale GaAs dot structures using molecular beam epitaxy and in situ gas etching. Self-assembled nanometer-scale InAs dots are formed first and are used as masks for the subsequent etching of GaAs by Cl2gas. In this approach, we also make use of HC1 gas etching to remove selectively the InAs wetting layer as well as the InAs dots to yield clean and strain-free GaAs dot structures. The height and base diameter of resultant GaAs dots are studied by atomic force microscopy and found to be 10±2 nm and 30±5 nm, respectively.

Original languageEnglish
Pages (from-to)L1198-L1201
JournalJapanese journal of applied physics
Volume34
Issue number9
DOIs
Publication statusPublished - 1995 Sep

Keywords

  • GaAs dots
  • Gas etching
  • In situ processing
  • InAs dots
  • MBE

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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