Abstract
High Ge fraction Si/Si 1-x Ge x /Si heterostructures (x = 0.5) are processed into the super self-aligned ultrashallow junction electrode (S 3 E) pMOSFETs. The ultrashallow junction is made from the selective epitaxial B-doped Si 0.5 Ge 0.5 on source/drain grown by chemical vapor deposition (CVD) and subsequent thermal diffusion of B from B-Si 0.5 Ge 0.5 into the substrate. The Ge fraction in the S 3 EMOSFETs' buried layer changes to 0.35 after the B diffusion at 750°C due to the interdiffusion between Si and Ge. The B diffusion depth in Si/SiGe/Si is shallower compared to that in Si. Compared to Si-channel S 3 EMOSFET, the maximum linear transconductance of the 0.12μm gate Si 0.65 Ge 0.35 -channel S 3 EMOSFET increases by approximately 45%. The threshold voltage shift and the S factor degradation in the short channel region are well suppressed compared to the Si-channel S 3 EMOSFETs. It is suggested that the suppression of short channel effects is caused by the ultrashallow source/drain and the valence band discontinuity at the Si 1-x Ge x /buffer Si interface.
Original language | English |
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Pages (from-to) | 254-259 |
Number of pages | 6 |
Journal | Applied Surface Science |
Volume | 224 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 2004 Mar 15 |
Keywords
- In situ doping
- S EMOSFET
- Short channel effect
- SiGe epitaxial growth
- Ultrashallow junction formation
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films