Fabrication of 0.12 μm pMOSFETs on high Ge fraction Si/Si 1-x Ge x /Si(1 0 0) heterostructure with ultrashallow source/drain formed using B-doped SiGe CVD

Doohwan Lee, Shinobu Takehiro, Masao Sakuraba, Junichi Murota, Toshiaki Tsuchiya

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

High Ge fraction Si/Si 1-x Ge x /Si heterostructures (x = 0.5) are processed into the super self-aligned ultrashallow junction electrode (S 3 E) pMOSFETs. The ultrashallow junction is made from the selective epitaxial B-doped Si 0.5 Ge 0.5 on source/drain grown by chemical vapor deposition (CVD) and subsequent thermal diffusion of B from B-Si 0.5 Ge 0.5 into the substrate. The Ge fraction in the S 3 EMOSFETs' buried layer changes to 0.35 after the B diffusion at 750°C due to the interdiffusion between Si and Ge. The B diffusion depth in Si/SiGe/Si is shallower compared to that in Si. Compared to Si-channel S 3 EMOSFET, the maximum linear transconductance of the 0.12μm gate Si 0.65 Ge 0.35 -channel S 3 EMOSFET increases by approximately 45%. The threshold voltage shift and the S factor degradation in the short channel region are well suppressed compared to the Si-channel S 3 EMOSFETs. It is suggested that the suppression of short channel effects is caused by the ultrashallow source/drain and the valence band discontinuity at the Si 1-x Ge x /buffer Si interface.

Original languageEnglish
Pages (from-to)254-259
Number of pages6
JournalApplied Surface Science
Volume224
Issue number1-4
DOIs
Publication statusPublished - 2004 Mar 15

Keywords

  • In situ doping
  • S EMOSFET
  • Short channel effect
  • SiGe epitaxial growth
  • Ultrashallow junction formation

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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