TY - GEN
T1 - Fabrication of 0.1 μm mosfet with super self-aligned ultrashallow junction electrodes using selective si1-xgex CVD
AU - Murota, Junichi
AU - Ishii, M.
AU - Goto, K.
AU - Sakuraba, M.
AU - Matsuura, T.
AU - Kudoh, Y.
AU - Koyanagi, M.
PY - 1997/1/1
Y1 - 1997/1/1
N2 - Fabrication process of 0.1μm MOSFET's were developed with Super Self-aligned ultra-Shallow junction Electrode(S3EMOSFET) by utilizing in-situ impurity doped Si1-xGex selective epitaxy on the source/drain regions at 550°C by CVD. Normal saturation characteristics were observed and the threshold voltage scarcely showed a shift with the gate length, which means that the short channel effect is greatly suppressed in the S3EMOSFET. Further improvements of the current drivability were performed by annealing and selective tungsten growth. The results show very high potentials of this device for an ultrasmall MOSFET, because the effective channel length is almost the same as the fabricated gate length and the source/drain junctions are extremely shallow.
AB - Fabrication process of 0.1μm MOSFET's were developed with Super Self-aligned ultra-Shallow junction Electrode(S3EMOSFET) by utilizing in-situ impurity doped Si1-xGex selective epitaxy on the source/drain regions at 550°C by CVD. Normal saturation characteristics were observed and the threshold voltage scarcely showed a shift with the gate length, which means that the short channel effect is greatly suppressed in the S3EMOSFET. Further improvements of the current drivability were performed by annealing and selective tungsten growth. The results show very high potentials of this device for an ultrasmall MOSFET, because the effective channel length is almost the same as the fabricated gate length and the source/drain junctions are extremely shallow.
UR - http://www.scopus.com/inward/record.url?scp=84907515443&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84907515443&partnerID=8YFLogxK
U2 - 10.1109/ESSDERC.1997.194444
DO - 10.1109/ESSDERC.1997.194444
M3 - Conference contribution
AN - SCOPUS:84907515443
T3 - European Solid-State Device Research Conference
SP - 376
EP - 379
BT - European Solid-State Device Research Conference
A2 - Grunbacher, H.
PB - IEEE Computer Society
T2 - 27th European Solid-State Device Research Conference, ESSDERC 1997
Y2 - 22 September 1997 through 24 September 1997
ER -