Fabrication method of sub-100nm metal-oxide-semiconductor field-effect transistor with thick gate oxide

Vipul Singh, Hiroshi Inokawa, Tetsuo Endoh, Hiroaki Satoh

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Based on the standard large-scale integrated circuit (LSI) process, sub-100nm gate metal-oxide-semiconductor field-effect transistor (MOSFET) with thick gate oxide was fabricated. This was realized only by the modification of layout design, and no customization of the fabrication process was necessary. This unique designing technique is of great use in obtaining low-input-leakage MOSFET by advanced LSI process for highperformance analog applications.

Original languageEnglish
Article number128002
JournalJapanese journal of applied physics
Volume49
Issue number12
DOIs
Publication statusPublished - 2010 Dec 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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