Based on the standard large-scale integrated circuit (LSI) process, sub-100nm gate metal-oxide-semiconductor field-effect transistor (MOSFET) with thick gate oxide was fabricated. This was realized only by the modification of layout design, and no customization of the fabrication process was necessary. This unique designing technique is of great use in obtaining low-input-leakage MOSFET by advanced LSI process for highperformance analog applications.
ASJC Scopus subject areas
- Physics and Astronomy(all)