Fabrication and thermoelectric properties of SiGe/PbTe thermoelectric composites

Hiroshi Okamura, Masafumi Miyajima, Yasutoshi Noda, Akira Kawasaki, Ryuzo Watanabe

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


To improve the conversion efficiency of thermoelectric device, segment type combination of different thermoelectric materials is very effective. However, it is necessary to consider the thermal stress when different materials are joined. So it has been suggested to join SiGe(high performance at 900∼1200K) to PbTe(high performance at 600∼900K) through the SiGe/PbTe FGM layers. We studied thermoelectric properties of each of SiGe/PbTe composites of the SiGe/PbTe FGM layers. The result is as follows. Electrical resistivity of the SiGe/PbTe composites in the present study was about 1000 times greater than that of SiGe or PbTe single phase. Therefore, the figure of merits of the SiGe/PbTe composites rather degraded compared to those for each single phase. This undesirable results were interpreted to be caused by the change of electronic structure at the interface of SiGe and PbTe with slight interdiffusion into each components.

Original languageEnglish
Pages (from-to)300-305
Number of pages6
JournalFuntai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Issue number3
Publication statusPublished - 1996 Mar


  • Composite
  • PbTe
  • SiGe
  • Thermal stress relaxation FGM
  • Thermoelectricity

ASJC Scopus subject areas

  • Mechanical Engineering
  • Industrial and Manufacturing Engineering
  • Metals and Alloys
  • Materials Chemistry


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