TY - JOUR
T1 - Fabrication and properties of one-mask-patterned ferroelectric integrated capacitors
AU - Torii, Kazuyoshi
AU - Shoji, Kenichi
AU - Kawakami, Hiroshi
AU - Kumihashi, Takao
AU - Itoga, Toshihiko
AU - Yokoyama, Natsuki
AU - Moniwa, Masahiro
AU - Kaga, Tooru
AU - Fujisaki, Yoshihisa
PY - 1997/10
Y1 - 1997/10
N2 - A one-mask-patterned ferroelectric capacitor test structure designed with a 0.5-μm feature size was fabricated. Oxygen plasma treatment after dry etching decreased the leakage current to as low as that of as-deposited film. These one-mask-patterned ferroelectric capacitors, with switching charge almost equal to as-deposited film, were successfully fabricated. Ferroelectric memories as dense as dynamic random access memories will become possible with this technology. However, the leakage current density for micron-sized capacitors is 2 to 10 times that of large capacitors. The leakage current in small capacitors is increased due to perimeter leakage that runs through the damaged region on the capacitor sidewall.
AB - A one-mask-patterned ferroelectric capacitor test structure designed with a 0.5-μm feature size was fabricated. Oxygen plasma treatment after dry etching decreased the leakage current to as low as that of as-deposited film. These one-mask-patterned ferroelectric capacitors, with switching charge almost equal to as-deposited film, were successfully fabricated. Ferroelectric memories as dense as dynamic random access memories will become possible with this technology. However, the leakage current density for micron-sized capacitors is 2 to 10 times that of large capacitors. The leakage current in small capacitors is increased due to perimeter leakage that runs through the damaged region on the capacitor sidewall.
UR - http://www.scopus.com/inward/record.url?scp=0031246061&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031246061&partnerID=8YFLogxK
U2 - 10.1002/(SICI)1520-6416(199710)121:1<43::AID-EEJ6>3.0.CO;2-#
DO - 10.1002/(SICI)1520-6416(199710)121:1<43::AID-EEJ6>3.0.CO;2-#
M3 - Article
AN - SCOPUS:0031246061
VL - 121
SP - 43
EP - 50
JO - Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
JF - Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
SN - 0424-7760
IS - 1
ER -