Fabrication and properties of one-mask-patterned ferroelectric integrated capacitors

Kazuyoshi Torii, Kenichi Shoji, Hiroshi Kawakami, Takao Kumihashi, Toshihiko Itoga, Natsuki Yokoyama, Masahiro Moniwa, Tooru Kaga, Yoshihisa Fujisaki

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    A one-mask-patterned ferroelectric capacitor test structure designed with a 0.5-μm feature size was fabricated. Oxygen plasma treatment after dry etching decreased the leakage current to as low as that of as-deposited film. These one-mask-patterned ferroelectric capacitors, with switching charge almost equal to as-deposited film, were successfully fabricated. Ferroelectric memories as dense as dynamic random access memories will become possible with this technology. However, the leakage current density for micron-sized capacitors is 2 to 10 times that of large capacitors. The leakage current in small capacitors is increased due to perimeter leakage that runs through the damaged region on the capacitor sidewall.

    Original languageEnglish
    Pages (from-to)43-50
    Number of pages8
    JournalElectrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
    Volume121
    Issue number1
    DOIs
    Publication statusPublished - 1997 Oct 1

    ASJC Scopus subject areas

    • Energy Engineering and Power Technology
    • Electrical and Electronic Engineering

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