Fabrication and power-management demonstration of four-terminal FinFETs

K. Endo, Y. Liu, M. Masahara, T. Matsukawa, S. O'uchi, E. Suzuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A high-aspect-ratio and damage-free vertical ultrathin channel (UTC) for a vertical-type double-gate (DG) MOSFET has been fabricated by using low-energy neutral-beam (NBE) etching. Also, dynamically power-controllable CMOS technology has been investigated using separated-gate four-terminal (4T) FinFETs. We demonstrate that the power consumption of the CMOS inverter can dynamically be controlled using the 4T-FinFET.

Original languageEnglish
Title of host publicationECS Transactions - 13th International Symposium on Silicon-On-Insulator Technology and Devices
Pages71-82
Number of pages12
Edition4
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event13th International Symposium on Silicon-On-Insulator Technology and Devices - 211th ECS Meeting - Chicago, IL, United States
Duration: 2007 May 62007 May 11

Publication series

NameECS Transactions
Number4
Volume6
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other13th International Symposium on Silicon-On-Insulator Technology and Devices - 211th ECS Meeting
CountryUnited States
CityChicago, IL
Period07/5/607/5/11

ASJC Scopus subject areas

  • Engineering(all)

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