Abstract
A novel integrated infrared (IR) sensor is described that incorporates a resonant silicon/silicon dioxide microbridge. The resonance frequency of the microbridge is sensitive to the incident IR power as a result of the thermally induced stress variation resulting from the absorption of the IR radiation. A merged process including on-wafer stress-free packaging, NMOS circuitry and bulk silicon micromachining is illustrated. One-port electrostatic excitation and capacitive detection was used, the resonator being electrically floating. Relative responsitivities of 450 ppm/μW of absorbed power were obtained.
Original language | English |
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Pages (from-to) | 92-99 |
Number of pages | 8 |
Journal | Sensors and Actuators: A. Physical |
Volume | 43 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 1994 May |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering