TY - JOUR
T1 - Fabrication and packaging of a resonant infrared sensor integrated in silicon
AU - Cabuz, C.
AU - Shoji, S.
AU - Fukatsu, K.
AU - Cabuz, E.
AU - Minami, K.
AU - Esashi, M.
N1 - Funding Information:
Cleopah-aC abuz is an assistantle cturer at the ‘Pol-itehnica’ University of Bucharest. She received the degreeo f Diploma Engineer (equivalentt o an M.S.) in electronicsa nd telecommunicationfsr om the same universityin 1979. Shies currentlyc ompletingh er Ph.D. on a subjectc oncernings ilicon-basedr esonant micro-sensorsa nd interfacec ircuitry for sensors.D uring the 1991-1992a cademicy ears hew asw ith the Department of Mechatronicsa nd Precision Engineering, Tohoku University, supportedw ith a grant from Inoue Foundation for Science.
PY - 1994/5
Y1 - 1994/5
N2 - A novel integrated infrared (IR) sensor is described that incorporates a resonant silicon/silicon dioxide microbridge. The resonance frequency of the microbridge is sensitive to the incident IR power as a result of the thermally induced stress variation resulting from the absorption of the IR radiation. A merged process including on-wafer stress-free packaging, NMOS circuitry and bulk silicon micromachining is illustrated. One-port electrostatic excitation and capacitive detection was used, the resonator being electrically floating. Relative responsitivities of 450 ppm/μW of absorbed power were obtained.
AB - A novel integrated infrared (IR) sensor is described that incorporates a resonant silicon/silicon dioxide microbridge. The resonance frequency of the microbridge is sensitive to the incident IR power as a result of the thermally induced stress variation resulting from the absorption of the IR radiation. A merged process including on-wafer stress-free packaging, NMOS circuitry and bulk silicon micromachining is illustrated. One-port electrostatic excitation and capacitive detection was used, the resonator being electrically floating. Relative responsitivities of 450 ppm/μW of absorbed power were obtained.
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U2 - 10.1016/0924-4247(93)00671-P
DO - 10.1016/0924-4247(93)00671-P
M3 - Article
AN - SCOPUS:0028430492
VL - 43
SP - 92
EP - 99
JO - Sensors and Actuators A: Physical
JF - Sensors and Actuators A: Physical
SN - 0924-4247
IS - 1-3
ER -