Epitaxial 0.67Pb(Mg1/3Nb2/3)O3-0. 33PbTiO3 (PMN-PT) thin films with electro-optic effects were fabricated on (La0.5Sr0.5)Co03(LSCO)/CeO 2/YSZ-bufferd Si(001) substrates by double-pulse excitation PLD method with a mask mechanism. Epitaxial growths of PMN-PT thin films were successively grown by the two step growth method of PMN-PT film. The PMN-PT seed layer was deposited on the LSCO layer at 500°C which was the same temperature of the LSCO deposition. PMN-PT thin films was deposited on PMN-PT seed layer at 600°C which enable to grow high crystalinity PMN-PT film with smooth surfaces. We obtained the optimum fabrication condition of PMN-PT film with μm order thickness. Obtained film showed high crystallinity with FWHM = 0.73 degree of 1.6μm thickness. Electro-optic property and refractive index measured by prism coupling method were 2.59 at the wavelength of 633 run. The electro-optic coefficient r13 and r33 was measured by applying the electrical field between semi-transparent thin top electrode of Pt and bottom LSCO electrode. Electro-optic coefficient was r13=17pm/V at TE mode and r33=55pm/V at TM mode.