Fabrication and optical properties of Pb(Mg1/3Nb 2/3)O3-PbTiO3 thin films on Si substrates by PLD method

Kazuo Shinozaki; Shogo Hayashi; Naoki Wakiya; Takanori Kiguchi; Junzo Tanaka; Nobuo Ishizawa; Keisuke Sato; Masao Kondo; Kazuaki Kurihara

doi:10.1109/ISAF.2007.4393425

Fabrication and optical properties of Pb(Mg_1/3Nb _2/3)O₃-PbTiO₃ thin films on Si substrates by PLD method

Kazuo Shinozaki, Shogo Hayashi, Naoki Wakiya, Takanori Kiguchi, Junzo Tanaka, Nobuo Ishizawa, Keisuke Sato, Masao Kondo, Kazuaki Kurihara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Epitaxial 0.67Pb(Mg_1/3Nb_2/3)O₃-0. 33PbTiO₃ (PMN-PT) thin films with electro-optic effects were fabricated on (La_0.5Sr_0.5)Co03(LSCO)/CeO ₂/YSZ-bufferd Si(001) substrates by double-pulse excitation PLD method with a mask mechanism. Epitaxial growths of PMN-PT thin films were successively grown by the two step growth method of PMN-PT film. The PMN-PT seed layer was deposited on the LSCO layer at 500°C which was the same temperature of the LSCO deposition. PMN-PT thin films was deposited on PMN-PT seed layer at 600°C which enable to grow high crystalinity PMN-PT film with smooth surfaces. We obtained the optimum fabrication condition of PMN-PT film with μm order thickness. Obtained film showed high crystallinity with FWHM = 0.73 degree of 1.6μm thickness. Electro-optic property and refractive index measured by prism coupling method were 2.59 at the wavelength of 633 run. The electro-optic coefficient r₁₃ and r₃₃ was measured by applying the electrical field between semi-transparent thin top electrode of Pt and bottom LSCO electrode. Electro-optic coefficient was r₁₃=17pm/V at TE mode and r₃₃=55pm/V at TM mode.

Original language	English
Title of host publication	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Pages	851-854
Number of pages	4
DOIs	https://doi.org/10.1109/ISAF.2007.4393425
Publication status	Published - 2007 Dec 1
Externally published	Yes
Event	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan Duration: 2007 May 27 → 2007 May 31

Publication series

Name	IEEE International Symposium on Applications of Ferroelectrics

Other

Other	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Country	Japan
City	Nara-city
Period	07/5/27 → 07/5/31

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ISAF.2007.4393425

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Shinozaki, K., Hayashi, S., Wakiya, N., Kiguchi, T., Tanaka, J., Ishizawa, N., Sato, K., Kondo, M., & Kurihara, K. (2007). Fabrication and optical properties of Pb(Mg_1/3Nb _2/3)O₃-PbTiO₃ thin films on Si substrates by PLD method. In 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF (pp. 851-854). [4393425] (IEEE International Symposium on Applications of Ferroelectrics). https://doi.org/10.1109/ISAF.2007.4393425

Fabrication and optical properties of Pb(Mg_1/3Nb _2/3)O₃-PbTiO₃ thin films on Si substrates by PLD method. / Shinozaki, Kazuo; Hayashi, Shogo; Wakiya, Naoki; Kiguchi, Takanori; Tanaka, Junzo; Ishizawa, Nobuo; Sato, Keisuke; Kondo, Masao; Kurihara, Kazuaki.

2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. p. 851-854 4393425 (IEEE International Symposium on Applications of Ferroelectrics).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shinozaki, K, Hayashi, S, Wakiya, N, Kiguchi, T, Tanaka, J, Ishizawa, N, Sato, K, Kondo, M & Kurihara, K 2007, Fabrication and optical properties of Pb(Mg_1/3Nb _2/3)O₃-PbTiO₃ thin films on Si substrates by PLD method. in 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF., 4393425, IEEE International Symposium on Applications of Ferroelectrics, pp. 851-854, 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF, Nara-city, Japan, 07/5/27. https://doi.org/10.1109/ISAF.2007.4393425

Shinozaki K, Hayashi S, Wakiya N, Kiguchi T, Tanaka J, Ishizawa N et al. Fabrication and optical properties of Pb(Mg_1/3Nb _2/3)O₃-PbTiO₃ thin films on Si substrates by PLD method. In 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. p. 851-854. 4393425. (IEEE International Symposium on Applications of Ferroelectrics). https://doi.org/10.1109/ISAF.2007.4393425

Shinozaki, Kazuo ; Hayashi, Shogo ; Wakiya, Naoki ; Kiguchi, Takanori ; Tanaka, Junzo ; Ishizawa, Nobuo ; Sato, Keisuke ; Kondo, Masao ; Kurihara, Kazuaki. / Fabrication and optical properties of Pb(Mg_1/3Nb _2/3)O₃-PbTiO₃ thin films on Si substrates by PLD method. 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. pp. 851-854 (IEEE International Symposium on Applications of Ferroelectrics).

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title = "Fabrication and optical properties of Pb(Mg1/3Nb 2/3)O3-PbTiO3 thin films on Si substrates by PLD method",

abstract = "Epitaxial 0.67Pb(Mg1/3Nb2/3)O3-0. 33PbTiO3 (PMN-PT) thin films with electro-optic effects were fabricated on (La0.5Sr0.5)Co03(LSCO)/CeO 2/YSZ-bufferd Si(001) substrates by double-pulse excitation PLD method with a mask mechanism. Epitaxial growths of PMN-PT thin films were successively grown by the two step growth method of PMN-PT film. The PMN-PT seed layer was deposited on the LSCO layer at 500°C which was the same temperature of the LSCO deposition. PMN-PT thin films was deposited on PMN-PT seed layer at 600°C which enable to grow high crystalinity PMN-PT film with smooth surfaces. We obtained the optimum fabrication condition of PMN-PT film with μm order thickness. Obtained film showed high crystallinity with FWHM = 0.73 degree of 1.6μm thickness. Electro-optic property and refractive index measured by prism coupling method were 2.59 at the wavelength of 633 run. The electro-optic coefficient r13 and r33 was measured by applying the electrical field between semi-transparent thin top electrode of Pt and bottom LSCO electrode. Electro-optic coefficient was r13=17pm/V at TE mode and r33=55pm/V at TM mode.",

author = "Kazuo Shinozaki and Shogo Hayashi and Naoki Wakiya and Takanori Kiguchi and Junzo Tanaka and Nobuo Ishizawa and Keisuke Sato and Masao Kondo and Kazuaki Kurihara",

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doi = "10.1109/ISAF.2007.4393425",

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series = "IEEE International Symposium on Applications of Ferroelectrics",

pages = "851--854",

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T1 - Fabrication and optical properties of Pb(Mg1/3Nb 2/3)O3-PbTiO3 thin films on Si substrates by PLD method

AU - Shinozaki, Kazuo

AU - Hayashi, Shogo

AU - Wakiya, Naoki

AU - Kiguchi, Takanori

AU - Tanaka, Junzo

AU - Ishizawa, Nobuo

AU - Sato, Keisuke

AU - Kondo, Masao

AU - Kurihara, Kazuaki

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N2 - Epitaxial 0.67Pb(Mg1/3Nb2/3)O3-0. 33PbTiO3 (PMN-PT) thin films with electro-optic effects were fabricated on (La0.5Sr0.5)Co03(LSCO)/CeO 2/YSZ-bufferd Si(001) substrates by double-pulse excitation PLD method with a mask mechanism. Epitaxial growths of PMN-PT thin films were successively grown by the two step growth method of PMN-PT film. The PMN-PT seed layer was deposited on the LSCO layer at 500°C which was the same temperature of the LSCO deposition. PMN-PT thin films was deposited on PMN-PT seed layer at 600°C which enable to grow high crystalinity PMN-PT film with smooth surfaces. We obtained the optimum fabrication condition of PMN-PT film with μm order thickness. Obtained film showed high crystallinity with FWHM = 0.73 degree of 1.6μm thickness. Electro-optic property and refractive index measured by prism coupling method were 2.59 at the wavelength of 633 run. The electro-optic coefficient r13 and r33 was measured by applying the electrical field between semi-transparent thin top electrode of Pt and bottom LSCO electrode. Electro-optic coefficient was r13=17pm/V at TE mode and r33=55pm/V at TM mode.

AB - Epitaxial 0.67Pb(Mg1/3Nb2/3)O3-0. 33PbTiO3 (PMN-PT) thin films with electro-optic effects were fabricated on (La0.5Sr0.5)Co03(LSCO)/CeO 2/YSZ-bufferd Si(001) substrates by double-pulse excitation PLD method with a mask mechanism. Epitaxial growths of PMN-PT thin films were successively grown by the two step growth method of PMN-PT film. The PMN-PT seed layer was deposited on the LSCO layer at 500°C which was the same temperature of the LSCO deposition. PMN-PT thin films was deposited on PMN-PT seed layer at 600°C which enable to grow high crystalinity PMN-PT film with smooth surfaces. We obtained the optimum fabrication condition of PMN-PT film with μm order thickness. Obtained film showed high crystallinity with FWHM = 0.73 degree of 1.6μm thickness. Electro-optic property and refractive index measured by prism coupling method were 2.59 at the wavelength of 633 run. The electro-optic coefficient r13 and r33 was measured by applying the electrical field between semi-transparent thin top electrode of Pt and bottom LSCO electrode. Electro-optic coefficient was r13=17pm/V at TE mode and r33=55pm/V at TM mode.

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