Fabrication and luminescence properties of single-crystalline, homoepitaxial zinc oxide films doped with tri- and tetravalent cations prepared by liquid phase epitaxy

Dirk Ehrentraut, Hideto Sato, Yuji Kagamitani, Akira Yoshikawa, Tsuguo Fukuda, Jan Pejchal, Karel Polak, Martin Nikl, Hideho Odaka, Koji Hatanaka, Hiroshi Fukumura

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Single-crystalline, homoepitaxial ZnO films doped with tri- and tetravalent cations were fabricated by liquid phase epitaxy (LPE) from low-temperature lithium chloride solution. The LPE is applied as a fast-screening tool to obtain mechanically undisturbed (0001) surfaces of the undoped and In3+ and Ge4+-doped ZnO films. Time-resolved photoluminescence characteristics upon the excitation by a femtosecond laser pulses are studied. Characteristics of the films are discussed and particularly the effect of In3+ and Ge4+ on the luminescence decay kinetics is examined. We find the double-exponential decay at room temperature consisting of an ultra fast and a slower component with decay times τ around 30-60 and 250-800 ps, respectively. High-intensity emission due to donor-acceptor pair recombination peaking around 420 nm at room temperature is obtained from the Li+, In3+ co-doped ZnO film, which shows the inverse power law decay at longer times.

Original languageEnglish
Pages (from-to)3369-3374
Number of pages6
JournalJournal of Materials Chemistry
Volume16
Issue number33
DOIs
Publication statusPublished - 2006 Aug 28

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

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