TY - JOUR
T1 - Fabrication and evaluation of AlN-SiC solid solutions with p-type electrical conduction
AU - Kobayashi, Ryota
AU - Tatami, Junichi
AU - Wakihara, Toru
AU - Komeya, Katsutoshi
AU - Meguro, Takeshi
AU - Tu, Rong
AU - Goto, Takashi
PY - 2009
Y1 - 2009
N2 - AlN-SiC solid solutions with p-type electrical conduction were fabricated with the addition of small amounts of Al and C. Powder mixtures of AlN and SiC with small amounts of Al and C (below 10 mol%) were consolidated by spark plasma sintering (SPS) at 2000°C for 10 min under 1 atm Ar, and then heat-treated at 2200°C for 3 h in an Ar flow to afford 2H AlN-SiC solid solutions. The relative densities of the 50AlN-50SiC-Al4C3 (A50-1AC) and 50AlN-50SiC-3Al4C3 (A50-3AC) samples were about 95%, whereas that of the 75A1N-25SiC-Al4C3 (A75-1AC) sample was about 86%. X-ray diffractometry (XRD) analysis showed that the samples comprised only the 2H phase, and except in the case of the A50-3 AC sample, no diffraction peaks of Al and C were observed. Although the samples without the additives (Al and C) were electrical insulators, addition of Al and C introduced p-type semiconduction. The electrical conductivities at 300°C of the A50-1AC and A50-3AC samples were about 30 and 100 S/m, respectively, whereas that of the A75-1AC sample was about 10-1 S/m. It was found that addition of Al and C brought about electrical conduction in AlN-SiC solid solutions.
AB - AlN-SiC solid solutions with p-type electrical conduction were fabricated with the addition of small amounts of Al and C. Powder mixtures of AlN and SiC with small amounts of Al and C (below 10 mol%) were consolidated by spark plasma sintering (SPS) at 2000°C for 10 min under 1 atm Ar, and then heat-treated at 2200°C for 3 h in an Ar flow to afford 2H AlN-SiC solid solutions. The relative densities of the 50AlN-50SiC-Al4C3 (A50-1AC) and 50AlN-50SiC-3Al4C3 (A50-3AC) samples were about 95%, whereas that of the 75A1N-25SiC-Al4C3 (A75-1AC) sample was about 86%. X-ray diffractometry (XRD) analysis showed that the samples comprised only the 2H phase, and except in the case of the A50-3 AC sample, no diffraction peaks of Al and C were observed. Although the samples without the additives (Al and C) were electrical insulators, addition of Al and C introduced p-type semiconduction. The electrical conductivities at 300°C of the A50-1AC and A50-3AC samples were about 30 and 100 S/m, respectively, whereas that of the A75-1AC sample was about 10-1 S/m. It was found that addition of Al and C brought about electrical conduction in AlN-SiC solid solutions.
KW - AlN-SiC solid solutions
KW - Electrical conductivity
KW - Spark plasma sintering
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U2 - 10.4028/3-908454-00-X.39
DO - 10.4028/3-908454-00-X.39
M3 - Article
AN - SCOPUS:58849131559
VL - 403
SP - 39
EP - 42
JO - Key Engineering Materials
JF - Key Engineering Materials
SN - 1013-9826
ER -