Fabrication and evaluation of AlN-SiC solid solutions with p-type electrical conduction

Ryota Kobayashi, Junichi Tatami, Toru Wakihara, Katsutoshi Komeya, Takeshi Meguro, Rong Tu, Takashi Goto

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

AlN-SiC solid solutions with p-type electrical conduction were fabricated with the addition of small amounts of Al and C. Powder mixtures of AlN and SiC with small amounts of Al and C (below 10 mol%) were consolidated by spark plasma sintering (SPS) at 2000°C for 10 min under 1 atm Ar, and then heat-treated at 2200°C for 3 h in an Ar flow to afford 2H AlN-SiC solid solutions. The relative densities of the 50AlN-50SiC-Al4C3 (A50-1AC) and 50AlN-50SiC-3Al4C3 (A50-3AC) samples were about 95%, whereas that of the 75A1N-25SiC-Al4C3 (A75-1AC) sample was about 86%. X-ray diffractometry (XRD) analysis showed that the samples comprised only the 2H phase, and except in the case of the A50-3 AC sample, no diffraction peaks of Al and C were observed. Although the samples without the additives (Al and C) were electrical insulators, addition of Al and C introduced p-type semiconduction. The electrical conductivities at 300°C of the A50-1AC and A50-3AC samples were about 30 and 100 S/m, respectively, whereas that of the A75-1AC sample was about 10-1 S/m. It was found that addition of Al and C brought about electrical conduction in AlN-SiC solid solutions.

Original languageEnglish
Pages (from-to)39-42
Number of pages4
JournalKey Engineering Materials
Volume403
DOIs
Publication statusPublished - 2009

Keywords

  • AlN-SiC solid solutions
  • Electrical conductivity
  • Spark plasma sintering

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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