Fabrication and elastic properties of InAs freestanding structures based on InAs/GaAs(1 1 1)A heteroepitaxial systems

H. Yamaguchi; R. Dreyfus; S. Miyashita; Y. Hirayama

doi:10.1016/S1386-9477(02)00327-2

Fabrication and elastic properties of InAs freestanding structures based on InAs/GaAs(1 1 1)A heteroepitaxial systems

H. Yamaguchi, R. Dreyfus, S. Miyashita, Y. Hirayama

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

InAs semiconducting freestanding structures, such as beams, Hall bars and cantilevers, were successfully fabricated based on InAs/GaAs(1 1 1)A heteroepitaxial systems with extremely high slenderness ratios (length/thickness) of up to 10³. Without any intentional doping, the structures showed clear n-type electric conductivity with increased carrier concentration and mobility in comparison with similarly grown heterostructure samples. The mechanical motion of cantilevers was electrically activated and clear resonance characteristics confirmed, indicating that these structures are promising for the application in the field of micro/nano electromechanical systems.

Original language	English
Pages (from-to)	1163-1167
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	13
Issue number	2-4
DOIs	https://doi.org/10.1016/S1386-9477(02)00327-2
Publication status	Published - 2002 Mar 1
Externally published	Yes

Keywords

(1 1 1)A
Heterostructures
InAs/GaAs
MEMS

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/S1386-9477(02)00327-2

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@article{818757da7f464aee8e394640a3025db5,

title = "Fabrication and elastic properties of InAs freestanding structures based on InAs/GaAs(1 1 1)A heteroepitaxial systems",

abstract = "InAs semiconducting freestanding structures, such as beams, Hall bars and cantilevers, were successfully fabricated based on InAs/GaAs(1 1 1)A heteroepitaxial systems with extremely high slenderness ratios (length/thickness) of up to 103. Without any intentional doping, the structures showed clear n-type electric conductivity with increased carrier concentration and mobility in comparison with similarly grown heterostructure samples. The mechanical motion of cantilevers was electrically activated and clear resonance characteristics confirmed, indicating that these structures are promising for the application in the field of micro/nano electromechanical systems.",

keywords = "(1 1 1)A, Heterostructures, InAs/GaAs, MEMS",

author = "H. Yamaguchi and R. Dreyfus and S. Miyashita and Y. Hirayama",

year = "2002",

month = mar,

day = "1",

doi = "10.1016/S1386-9477(02)00327-2",

language = "English",

volume = "13",

pages = "1163--1167",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "2-4",

}

TY - JOUR

T1 - Fabrication and elastic properties of InAs freestanding structures based on InAs/GaAs(1 1 1)A heteroepitaxial systems

AU - Yamaguchi, H.

AU - Dreyfus, R.

AU - Miyashita, S.

AU - Hirayama, Y.

PY - 2002/3/1

Y1 - 2002/3/1

N2 - InAs semiconducting freestanding structures, such as beams, Hall bars and cantilevers, were successfully fabricated based on InAs/GaAs(1 1 1)A heteroepitaxial systems with extremely high slenderness ratios (length/thickness) of up to 103. Without any intentional doping, the structures showed clear n-type electric conductivity with increased carrier concentration and mobility in comparison with similarly grown heterostructure samples. The mechanical motion of cantilevers was electrically activated and clear resonance characteristics confirmed, indicating that these structures are promising for the application in the field of micro/nano electromechanical systems.

AB - InAs semiconducting freestanding structures, such as beams, Hall bars and cantilevers, were successfully fabricated based on InAs/GaAs(1 1 1)A heteroepitaxial systems with extremely high slenderness ratios (length/thickness) of up to 103. Without any intentional doping, the structures showed clear n-type electric conductivity with increased carrier concentration and mobility in comparison with similarly grown heterostructure samples. The mechanical motion of cantilevers was electrically activated and clear resonance characteristics confirmed, indicating that these structures are promising for the application in the field of micro/nano electromechanical systems.

KW - (1 1 1)A

KW - Heterostructures

KW - InAs/GaAs

KW - MEMS

UR - http://www.scopus.com/inward/record.url?scp=0036493023&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036493023&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(02)00327-2

DO - 10.1016/S1386-9477(02)00327-2

M3 - Article

AN - SCOPUS:0036493023

VL - 13

SP - 1163

EP - 1167

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 2-4

ER -