Fabrication and elastic properties of InAs freestanding structures based on InAs/GaAs(1 1 1)A heteroepitaxial systems

H. Yamaguchi, R. Dreyfus, S. Miyashita, Y. Hirayama

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

InAs semiconducting freestanding structures, such as beams, Hall bars and cantilevers, were successfully fabricated based on InAs/GaAs(1 1 1)A heteroepitaxial systems with extremely high slenderness ratios (length/thickness) of up to 103. Without any intentional doping, the structures showed clear n-type electric conductivity with increased carrier concentration and mobility in comparison with similarly grown heterostructure samples. The mechanical motion of cantilevers was electrically activated and clear resonance characteristics confirmed, indicating that these structures are promising for the application in the field of micro/nano electromechanical systems.

Original languageEnglish
Pages (from-to)1163-1167
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume13
Issue number2-4
DOIs
Publication statusPublished - 2002 Mar 1
Externally publishedYes

Keywords

  • (1 1 1)A
  • Heterostructures
  • InAs/GaAs
  • MEMS

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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