TY - JOUR
T1 - Fabrication and elastic properties of InAs freestanding structures based on InAs/GaAs(1 1 1)A heteroepitaxial systems
AU - Yamaguchi, H.
AU - Dreyfus, R.
AU - Miyashita, S.
AU - Hirayama, Y.
N1 - Funding Information:
The authors are grateful to Dr. Y. Homma for his help in the SEM observations. They also thank Dr. Takaaki Mukai for his encouragement throughout this work. This study was partly supported by the NEDO collaboration program (NTDP-98 Nano-elasticity) and the Japan Society for the Promotion of Science (“Research for the Future” Program JSPS-RFTF96P00103).
PY - 2002/3
Y1 - 2002/3
N2 - InAs semiconducting freestanding structures, such as beams, Hall bars and cantilevers, were successfully fabricated based on InAs/GaAs(1 1 1)A heteroepitaxial systems with extremely high slenderness ratios (length/thickness) of up to 103. Without any intentional doping, the structures showed clear n-type electric conductivity with increased carrier concentration and mobility in comparison with similarly grown heterostructure samples. The mechanical motion of cantilevers was electrically activated and clear resonance characteristics confirmed, indicating that these structures are promising for the application in the field of micro/nano electromechanical systems.
AB - InAs semiconducting freestanding structures, such as beams, Hall bars and cantilevers, were successfully fabricated based on InAs/GaAs(1 1 1)A heteroepitaxial systems with extremely high slenderness ratios (length/thickness) of up to 103. Without any intentional doping, the structures showed clear n-type electric conductivity with increased carrier concentration and mobility in comparison with similarly grown heterostructure samples. The mechanical motion of cantilevers was electrically activated and clear resonance characteristics confirmed, indicating that these structures are promising for the application in the field of micro/nano electromechanical systems.
KW - (1 1 1)A
KW - Heterostructures
KW - InAs/GaAs
KW - MEMS
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U2 - 10.1016/S1386-9477(02)00327-2
DO - 10.1016/S1386-9477(02)00327-2
M3 - Article
AN - SCOPUS:0036493023
VL - 13
SP - 1163
EP - 1167
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 2-4
ER -