Fabrication and characterization of sub-micron scale hall devices from 2-dimensional electron gas at the heterostrutcure of GaAs/AlGaAs

Neeti Keswani, Yoshikata Nakajima, Neha Chauhan, Sakthi Kumar, H. Ohno, Pintu Das

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this work, we report the fabrication and transport properties of sub-micron Hall devices to be used for nanomagnetic studies. Hall bars were fabricated using electron-beam lithography followed by wet etching of GaAs/AlGaAs heterostructures containing two-dimensional electron gas (2-DEG). Metallization using multiple metallic layers were used to achieve ohmic contacts with the 2-DEG which is about 240 nm below the surface. Detailed characterization of the metallic layers using X-ray Photoelectron Spectroscopy (XPS) demonstrate the role of alloy formation and diffusion to form ohmic contacts with the 2-DEG. Electronic transport measurements show the metallic character of the 2-DEG. Hall effect and magnetoresistance were measured to estimate the carrier mobility of 4.2×104 cm2/V-s at 5 K in dark.

Original languageEnglish
Title of host publication2nd International Conference on Condensed Matter and Applied Physics, ICC 2017
EditorsManoj Singh Shekhawat, Sudhir Bhardwaj, Bhuvneshwer Suthar
PublisherAmerican Institute of Physics Inc.
ISBN (Electronic)9780735416482
DOIs
Publication statusPublished - 2018 May 8
Event2nd International Conference on Condensed Matter and Applied Physics, ICC 2017 - Bikaner, India
Duration: 2017 Nov 242017 Nov 25

Publication series

NameAIP Conference Proceedings
Volume1953
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other2nd International Conference on Condensed Matter and Applied Physics, ICC 2017
CountryIndia
CityBikaner
Period17/11/2417/11/25

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Fabrication and characterization of sub-micron scale hall devices from 2-dimensional electron gas at the heterostrutcure of GaAs/AlGaAs'. Together they form a unique fingerprint.

  • Cite this

    Keswani, N., Nakajima, Y., Chauhan, N., Kumar, S., Ohno, H., & Das, P. (2018). Fabrication and characterization of sub-micron scale hall devices from 2-dimensional electron gas at the heterostrutcure of GaAs/AlGaAs. In M. S. Shekhawat, S. Bhardwaj, & B. Suthar (Eds.), 2nd International Conference on Condensed Matter and Applied Physics, ICC 2017 [050071] (AIP Conference Proceedings; Vol. 1953). American Institute of Physics Inc.. https://doi.org/10.1063/1.5032726