Abstract
As an application of the "bottom-up" self-organization growth technique to the fabrication of nanoscale mechanical structures, we selectively etched a GaAs sacrificial layer under InAs wires preferentially grown on bunched steps on misoriented GaAs(110) surfaces, which led to the successful formation of single crystal InAs nanoscale cantilevers. The lengths, widths, and thicknesses of the nanolevers are typically 50-300, 20-100 and 10-20 nm, respectively. The force constant, as measured by the force-modulation imaging technique using contact-mode atomic force microscopy, ranges from 0.5 to 10 N/m, showing good agreement with that estimated from the elastic constant of InAs. The resonance frequency is expected to reach 500 MHz for the smallest one, which promises possible application to high-speed nanomechanical devices.
Original language | English |
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Pages (from-to) | 1171-1176 |
Number of pages | 6 |
Journal | Surface Science |
Volume | 532-535 |
DOIs | |
Publication status | Published - 2003 Jun 10 |
Externally published | Yes |
Event | Proceedings of the 7th International Conference on Nanometer - Malmo, Sweden Duration: 2002 Aug 29 → 2002 Aug 31 |
Keywords
- Atomic force microscopy
- Gallium arsenide
- Indium arsenide
- Molecular beam epitaxy
- Semiconductor-semiconductor heterostructures
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry