Fabrication and characterization of large figure-of-merit epitaxial PMnN-PZT/Si transducer for piezoelectric MEMS sensors

Shinya Yoshida, Hiroaki Hanzawa, Kiyotaka Wasa, Shuji Tanaka

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

This paper reports a highly c-axis oriented 0.06Pb(Mn1/3,Nb2/3)O3-0.94Pb(Zr0.5,Ti0.5)O3 (PMnN-PZT) epitaxial thin film sputter-deposited on a Si substrate for MEMS (MicroElectro Mechanical Systems) sensor applications. High c-axis orientation ratio more than 75% was obtained for the PMnN-PZT epitaxial thin film with thicknesses up to 4 μm by fast cooling after sputter deposition. The films exhibited a relatively large piezoelectric coefficient, e31,f ≤-14C/m2, and a quite small dielectric constant, εr33 ≤ 200. As a result, a figure of merit defined as (e31,f)20εr33 reached ∼110 GPa, which is the highest value ever reported for piezoelectric thin films on Si. Neither significant degradation nor damage of the PMnN-PZT thin film was observed during MEMS fabrication processes. The dependency of the piezoelectric and dielectric properties on temperature was small compared with conventional PZT polycrystalline thin film on Si. This epitaxial PMnN-PZT/Si transducer has a great potential for application to piezoelectric MEMS sensors.

Original languageEnglish
Pages (from-to)201-208
Number of pages8
JournalSensors and Actuators, A: Physical
Volume239
DOIs
Publication statusPublished - 2016 Mar 1

Keywords

  • Epitaxial PZT-based thin film on Si
  • Lead zirconate titanate(PZT)
  • MEMS(Micro-electro Mechanical Systems)
  • Piezoelectric MEMS gyroscope

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

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