Magnetic tunnel junctions (MTJs) with an L10 -ordered FePt alloy were fabricated and characterized. As a bottom electrode, an in-plane magnetized L10 FePt(110) layer was grown epitaxially on an Au buffer layer. A multiple oxidation process was used for the formation of Al oxide barriers. The L10-FePt/AlO/FeCo MTJ prepared shows tunnel magnetoresistance of 18% and 40% at room temperature (RT) and 4.2 K, respectively. The observed RT magnetoresistance is improved, compared to the previously reported results for the L10-FePt MTJs by a conventional single oxidation process.
- FePt-ordered alloy
- Multiple oxidation
- Tunnel junction
- Tunnel magnetoresistance
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering