Fabrication and characterization of Co-Mn-Al Heusler-type thin film

H. Kubota, J. Nakata, M. Oogane, Y. Ando, H. Kato, A. Sakuma, T. Miyazaki

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9 Citations (Scopus)

Abstract

Co-Mn-Al thin films were prepared using ultrahigh-vacuum magnetron sputtering on thermally oxidized silicon substrates at various substrate temperatures. Composition, crystal structure, magnetic property, and surface roughness of the films were investigated. The film prepared at a substrate temperature (Ts) of around 300 °C had Co2 MnAl B2 structure, revealing partial disorder between Mn and Al sites. Magnetization exhibited a maximum and coercive field exhibited a minimum around Ts =300 °C. Surface roughness increased with the substrate temperature. The film prepared at a substrate temperature of 300 °C was applied to a bottom electrode of a magnetic tunnel junction, thereby creating a large tunnel magnetoresistance.

Original languageEnglish
Article number10C913
JournalJournal of Applied Physics
Volume97
Issue number10
DOIs
Publication statusPublished - 2005 May 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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