Fabrication and characterization of an undoped GaAs single hole transistor

O. Klochan, J. C.H. Chen, A. P. Micolich, A. R. Hamilton, K. Muraki, Yoshiro Hirayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device exhibits Coulomb blockade oscillations and shows stable electrical characteristics with little drift and improved noise performance.

Original languageEnglish
Title of host publication2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Pages113-114
Number of pages2
DOIs
Publication statusPublished - 2010 Dec 1
Event2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia
Duration: 2010 Dec 122010 Dec 15

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Other

Other2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
CountryAustralia
CityCanberra, ACT
Period10/12/1210/12/15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Klochan, O., Chen, J. C. H., Micolich, A. P., Hamilton, A. R., Muraki, K., & Hirayama, Y. (2010). Fabrication and characterization of an undoped GaAs single hole transistor. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 113-114). [5699687] (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2010.5699687