Fabrication and characterization of a Schottky barrier diode-type ultraviolet sensor using a ZnO single crystal

Haruyuki Endo, Mayo Sugibuchi, Kohsuke Takahashi, Shunsuke Goto, Tatsuo Hasegawa, Eriko Ohshima, Kazuyuki Meguro, Hane Kazuhiro, Yasube Kashiwaba

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

In this paper, a visible light blind ultraviolet sensor of a Schottky barrier photodiode using a ZnO single crystal is described. The sensor consists of a semitransparent Pt film for the Schottky electrode and Al thin film for the ohmic electrode on an n-type ZnO single crystal substrate grown by the hydrothermal method. The responsivity was 0.12 A/W at the wavelength of 365 nm and the photoresponse time was 12 μs.

Original languageEnglish
Pages (from-to)131-135+4
JournalIEEJ Transactions on Sensors and Micromachines
Volume127
Issue number3
DOIs
Publication statusPublished - 2007

Keywords

  • Schottky barrier photodiode
  • Ultraviolet sensor
  • ZnO single crystal

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering

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