Fabrication and characterization of a 2D hole system a in novel (311)A GaAs SISFET

W. R. Clarke; A. P. Micolich; A. R. Hamilton; M. Y. Simmons; K. Muraki; Y. Hirayama

doi:10.1016/j.mejo.2005.02.073

Fabrication and characterization of a 2D hole system a in novel (311)A GaAs SISFET

W. R. Clarke, A. P. Micolich, A. R. Hamilton, M. Y. Simmons, K. Muraki, Y. Hirayama

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

We demonstrate a novel heterostructure for inducing 2D hole systems in (311)A GaAs-AlGaAs heterostructures that offers advantages over previous methods including low turn on voltages, easier fabrication and good interface roughness. The heterostructure incorporates a metallic p+-GaAs cap layer as an in situ top gate that pins the Fermi energy close to the valence band and can then be used to induce the 2D hole system at the GaAs/AlGaAs interface.

Original language	English
Pages (from-to)	327-330
Number of pages	4
Journal	Microelectronics Journal
Volume	36
Issue number	3-6
DOIs	https://doi.org/10.1016/j.mejo.2005.02.073
Publication status	Published - 2005 Mar 1
Externally published	Yes

Keywords

2D hole system
Field effect transitor
GaAs
p-Type

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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@article{c52ced0a9586447b8b81a42be4fa437c,

title = "Fabrication and characterization of a 2D hole system a in novel (311)A GaAs SISFET",

abstract = "We demonstrate a novel heterostructure for inducing 2D hole systems in (311)A GaAs-AlGaAs heterostructures that offers advantages over previous methods including low turn on voltages, easier fabrication and good interface roughness. The heterostructure incorporates a metallic p+-GaAs cap layer as an in situ top gate that pins the Fermi energy close to the valence band and can then be used to induce the 2D hole system at the GaAs/AlGaAs interface.",

keywords = "2D hole system, Field effect transitor, GaAs, p-Type",

author = "Clarke, {W. R.} and Micolich, {A. P.} and Hamilton, {A. R.} and Simmons, {M. Y.} and K. Muraki and Y. Hirayama",

year = "2005",

month = mar,

day = "1",

doi = "10.1016/j.mejo.2005.02.073",

language = "English",

volume = "36",

pages = "327--330",

journal = "Microelectronics",

issn = "0026-2692",

publisher = "Elsevier Limited",

number = "3-6",

}

TY - JOUR

T1 - Fabrication and characterization of a 2D hole system a in novel (311)A GaAs SISFET

AU - Clarke, W. R.

AU - Micolich, A. P.

AU - Hamilton, A. R.

AU - Simmons, M. Y.

AU - Muraki, K.

AU - Hirayama, Y.

PY - 2005/3/1

Y1 - 2005/3/1

N2 - We demonstrate a novel heterostructure for inducing 2D hole systems in (311)A GaAs-AlGaAs heterostructures that offers advantages over previous methods including low turn on voltages, easier fabrication and good interface roughness. The heterostructure incorporates a metallic p+-GaAs cap layer as an in situ top gate that pins the Fermi energy close to the valence band and can then be used to induce the 2D hole system at the GaAs/AlGaAs interface.

AB - We demonstrate a novel heterostructure for inducing 2D hole systems in (311)A GaAs-AlGaAs heterostructures that offers advantages over previous methods including low turn on voltages, easier fabrication and good interface roughness. The heterostructure incorporates a metallic p+-GaAs cap layer as an in situ top gate that pins the Fermi energy close to the valence band and can then be used to induce the 2D hole system at the GaAs/AlGaAs interface.

KW - 2D hole system

KW - Field effect transitor

KW - GaAs

KW - p-Type

UR - http://www.scopus.com/inward/record.url?scp=33644541113&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644541113&partnerID=8YFLogxK

U2 - 10.1016/j.mejo.2005.02.073

DO - 10.1016/j.mejo.2005.02.073

M3 - Conference article

AN - SCOPUS:33644541113

VL - 36

SP - 327

EP - 330

JO - Microelectronics

JF - Microelectronics

SN - 0026-2692

IS - 3-6

ER -