Fabrication and characterization of a 2D hole system a in novel (311)A GaAs SISFET

W. R. Clarke, A. P. Micolich, A. R. Hamilton, M. Y. Simmons, K. Muraki, Y. Hirayama

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

We demonstrate a novel heterostructure for inducing 2D hole systems in (311)A GaAs-AlGaAs heterostructures that offers advantages over previous methods including low turn on voltages, easier fabrication and good interface roughness. The heterostructure incorporates a metallic p+-GaAs cap layer as an in situ top gate that pins the Fermi energy close to the valence band and can then be used to induce the 2D hole system at the GaAs/AlGaAs interface.

Original languageEnglish
Pages (from-to)327-330
Number of pages4
JournalMicroelectronics Journal
Volume36
Issue number3-6
DOIs
Publication statusPublished - 2005 Mar 1
Externally publishedYes

Keywords

  • 2D hole system
  • Field effect transitor
  • GaAs
  • p-Type

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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