Fabrication and characteristics of a Pt/MgxZn1-xO Schottky photodiode on a ZnO single crystal

H. Endo, M. Sugibuchi, K. Takahashi, S. Goto, K. Hane, Y. Kashiwaba

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)

Abstract

The photoresponse of a Pt/MgxZn1-xO Schottky photodiode using a (0001) ZnO single crystal substrate grown by the hydrothermal growth method is described in this report. MgxZn1-xO thin films were prepared by a reactive RF magnetron sputtering method on the Zn-face of the ZnO single crystal substrate. The prepared MgxZn 1-xO thin films had a band gap of 4.1 eV. The fabricated Schottky photodiode had high responsivity of 0.034 A/W at the wavelength of 250 nm, and the responsivity ratio at wavelength of 250 nm and 550 nm was of the order of 4.

Original languageEnglish
Pages (from-to)3119-3121
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number9
DOIs
Publication statusPublished - 2008 Dec 1
Event34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan
Duration: 2007 Oct 152007 Oct 18

ASJC Scopus subject areas

  • Condensed Matter Physics

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