The photoresponse of a Pt/MgxZn1-xO Schottky photodiode using a (0001) ZnO single crystal substrate grown by the hydrothermal growth method is described in this report. MgxZn1-xO thin films were prepared by a reactive RF magnetron sputtering method on the Zn-face of the ZnO single crystal substrate. The prepared MgxZn 1-xO thin films had a band gap of 4.1 eV. The fabricated Schottky photodiode had high responsivity of 0.034 A/W at the wavelength of 250 nm, and the responsivity ratio at wavelength of 250 nm and 550 nm was of the order of 4.
|Number of pages||3|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2008 Dec 1|
|Event||34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan|
Duration: 2007 Oct 15 → 2007 Oct 18
ASJC Scopus subject areas
- Condensed Matter Physics