Extremely uniform epitaxial growth of graphene from sputtered SiC films on SiC substrates

Fuminori Mitsuhashi, Masaya Okada, Yasunori Tateno, Takashi Nakabayashi, Masaki Ueno, Hiroyuki Nagasawa, Hirokazu Fukidome, Maki Suemitsu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A novel method to fabricate uniform epitaxial graphene on C-face SiC substrates was investigated. Graphene was grown on the C-face 6H-SiC substrates with a sputtered SiC film by annealing temperatures ranging from 1400 to 1900 °C under an Ar ambient. The fractional area of the graphene having the layer number of two was about 95% in a 75×75 μm square by a Raman mapping and a low energy electron microscopy. Graphene on the C-face SiC fabricated by this method is quite uniform compared to that made by a conventional method without the sputtered SiC films and is thus suitable for high frequency analog devices.

Original languageEnglish
Pages (from-to)51-56
Number of pages6
JournalMRS Advances
Volume2
Issue number1
DOIs
Publication statusPublished - 2017 Jan 1

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Extremely uniform epitaxial growth of graphene from sputtered SiC films on SiC substrates'. Together they form a unique fingerprint.

Cite this