Extremely non-porous ultra-low-k SiOCH (k=2.3) with sufficient modulus (>10 GPa), high Cu diffusion barrier and high tolerance for integration process formed by large-radius neutral-beam enhanced CVD

Yoshiyuki Kikuchi, Akira Wada, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We developed a practical large-radius neutral beam enhanced CVD with a dimethoxy tetramethy ldisiloxane (DMOTMDS) to form low-k SiOCH film on 8-inch Si wafers. We fabricated extremely non-porous film with an ultra-low k-value of 2.3 and a sufficient modulus (>10 GPa). This particular film did not show any damage from the oxygen plasma and acid or alkali solutions used in the fabrication process. Furthermore, the dense film almost completely resisted Cu diffusion into the film during thermal annealing.

Original languageEnglish
Title of host publicationProceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013
DOIs
Publication statusPublished - 2013
Event2013 16th IEEE International Interconnect Technology Conference, IITC 2013 - Kyoto, Japan
Duration: 2013 Jun 132013 Jun 15

Publication series

NameProceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013

Other

Other2013 16th IEEE International Interconnect Technology Conference, IITC 2013
CountryJapan
CityKyoto
Period13/6/1313/6/15

ASJC Scopus subject areas

  • Hardware and Architecture
  • Control and Systems Engineering

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