TY - GEN
T1 - Extremely non-porous ultra-low-k SiOCH (k=2.3) with sufficient modulus (>10 GPa), high Cu diffusion barrier and high tolerance for integration process formed by large-radius neutral-beam enhanced CVD
AU - Kikuchi, Yoshiyuki
AU - Wada, Akira
AU - Samukawa, Seiji
PY - 2013
Y1 - 2013
N2 - We developed a practical large-radius neutral beam enhanced CVD with a dimethoxy tetramethy ldisiloxane (DMOTMDS) to form low-k SiOCH film on 8-inch Si wafers. We fabricated extremely non-porous film with an ultra-low k-value of 2.3 and a sufficient modulus (>10 GPa). This particular film did not show any damage from the oxygen plasma and acid or alkali solutions used in the fabrication process. Furthermore, the dense film almost completely resisted Cu diffusion into the film during thermal annealing.
AB - We developed a practical large-radius neutral beam enhanced CVD with a dimethoxy tetramethy ldisiloxane (DMOTMDS) to form low-k SiOCH film on 8-inch Si wafers. We fabricated extremely non-porous film with an ultra-low k-value of 2.3 and a sufficient modulus (>10 GPa). This particular film did not show any damage from the oxygen plasma and acid or alkali solutions used in the fabrication process. Furthermore, the dense film almost completely resisted Cu diffusion into the film during thermal annealing.
UR - http://www.scopus.com/inward/record.url?scp=84886663290&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84886663290&partnerID=8YFLogxK
U2 - 10.1109/IITC.2013.6615563
DO - 10.1109/IITC.2013.6615563
M3 - Conference contribution
AN - SCOPUS:84886663290
SN - 9781479904396
T3 - Proceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013
BT - Proceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013
T2 - 2013 16th IEEE International Interconnect Technology Conference, IITC 2013
Y2 - 13 June 2013 through 15 June 2013
ER -