Extremely Low Threshold Current Operation in 1.5-µm MQW-DFB Laser Diodes with Semi-Insulating InP Current Blocking Region

Tatsuya Sasaki, Hiroyuki Yamazaki, Naoya Henmi, Hirohito Yamada, Masayuki Yamaguchi, Mitsuhiro Kitamura, Ikuo Mito

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Threshold current operation of 2.5 mA was achieved for 1.5-µm multiple-quantum-well distributed feedback (MQW-DFB) laser diodes (LD’s) with semi-insulating current blocking layers entirely grown by metal organic vapor phase epitaxy (MOVPE). Such low threshold current was attained by reduced leakage current and reduced mirror loss in the laser structure. The required bias current for achieving several gigahertz bandwidth was markedly reduced due to the enhanced differential gain and low threshold current. Due to the reduced lasing delay time in such low threshold LD's, up to 5-GHz zero-bias current modulation, with a clear eye opening, was successfully demonstrated.

Original languageEnglish
Pages (from-to)1343-1349
Number of pages7
JournalJournal of Lightwave Technology
Volume8
Issue number9
DOIs
Publication statusPublished - 1990 Sep
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Fingerprint Dive into the research topics of 'Extremely Low Threshold Current Operation in 1.5-µm MQW-DFB Laser Diodes with Semi-Insulating InP Current Blocking Region'. Together they form a unique fingerprint.

Cite this