Extremely low thermal conductivity of high density and ordered 10 nm-diameter silicon nanowires array

Akiou Kikuchi, Akifumi Yao, Isamu Mori, Takahito Ono, Seiji Samukawa

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

We present the fabrication and thermal conductivity of a high-density and ordered 10 nm-diameter Si nanowires (SiNWs) array for thermoelectric devices, realized through the use of a bio-template mask as well as neutral beam etching techniques. The SiNWs were embedded into spin-on-glass (SoG) to measure the thermal conductivity of the SiNWs-SoG composites. By decreasing the thickness of SiNWs-SoG composites from 100 nm to 30 nm, the thermal conductivity was drastically decreased from 1.8 ± 0.3 W m−1 K−1 to 0.5 ± 0.1 W m−1 K−1. Moreover, when the electrical conductivities of 100 nm-long SiNWs were 1.7 × 10 S m−1, 6.5 × 103 S m−1 and 1.3 × 105S m−1, their thermal conductivities of SiNWs-SoG composites were 1.8 ± 0.3 W m−1 K−1, 1.6 ± 0.2 W m−1 K−1 and 0.7 ± 0.2 W m−1 K−1, respectively. The cross-plane thermal conductivity of the fabricated 10 nm diameter SiNWs-SoG composites was dependent on their thickness and the electrical conductivity of SiNWs, which were significantly decreased from bulk.

Original languageEnglish
Article number091908
JournalApplied Physics Letters
Volume110
Issue number9
DOIs
Publication statusPublished - 2017 Feb 27

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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