Extremely low operating current λ = 1.3 μm multiple-quantum-well laser diodes

Hirohito Yamada, Tomoji Terakado, Yoshihiro Sasaki, Shinji Takano, Kunio Uehara, Toshitaka Torikai, Toshio Uji

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Remarkable improvements in high temperature performance have been realized in 1.3 μm LDs for use in fiber-optic subscriber systems. At 85°C, the operating current for an MQW LD with 70% rear facet coating was as low as 37 mA under 5 mW output power. More than 12 mW of output power was also obtained at 120°C. In order to achieve further reduction in the operating current, fundamental device parameters, such as internal loss, internal quantum efficiency, gain coefficient, and transparency current density, were measured for the LDs. Using these parameters, light output power versus current characteristics were calculated for the LDs with various cavity lengths and mirror reflectivities. The calculated result shows possibility of a drastic reduction in the operating current for the LDs with short cavity (L ≤ 150 μm) and high reflective coating. Fabricated high-reflectivity coated short cavity lasers showed extremely low threshold current of 7 mA, and operating current of 25 mA under 5 mW output power at 85°C for a 100 μm-long LD with 70%/96% coating configuration.

Original languageEnglish
Title of host publicationNEC Research and Development
Pages354-364
Number of pages11
Volume33
Edition3
Publication statusPublished - 1992 Jul 1
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Yamada, H., Terakado, T., Sasaki, Y., Takano, S., Uehara, K., Torikai, T., & Uji, T. (1992). Extremely low operating current λ = 1.3 μm multiple-quantum-well laser diodes. In NEC Research and Development (3 ed., Vol. 33, pp. 354-364)