Extremely-high sensitive terahertz detector based on dual-grating gate InP-HEMTs

Yuki Kurita, Kengo Kobayashi, Taiichi Otsuji, Guillaume Ducournau, Yahya M. Meziani, Vyacheslav V. Popov, Wojciech Knap

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on an extremely-high sensitive terahertz (THz) detector based on our original asymmetric dual-grating gate high electron mobility transistors (A-DGG HEMTs) designed and fabricated using InAlAs/InGaAs/InP material systems. The obtained responsivity is 22.7 kV/W at 200 GHz. To the best of our knowledge, this value is the record responsivity ever reported for this frequency range at room temperature.

Original languageEnglish
Title of host publication2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013
DOIs
Publication statusPublished - 2013 Aug 26
Event2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013 - Kobe, Japan
Duration: 2013 May 192013 May 23

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

Other2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013
CountryJapan
CityKobe
Period13/5/1913/5/23

Keywords

  • detection
  • high electron mobility transistor
  • terahertz
  • two-dimensional plasmon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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