Extreme ultraviolet mask defect observation using an extreme ultraviolet microscope

Tsuyoshi Amano, Tsuneo Terasawa, Hidehiro Watanabe, Mitsunori Toyoda, Tetsuo Harada, Takeo Watanabe, Hiroo Kinoshita

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    To predict the effect of a phase defect position relative to the absorber pattern on a wafer printed image, a programmed phase defect mask was fabricated, and was observed using an extreme ultraviolet (EUV) microscope employing EUV light from a beam line BL3 of the New SUBARU at the University of Hyogo. The mask prepared for this work contains programmed phase defects along with half-pitch (hp) 64 nm lines-and-spaces (L/S) absorber patterns. The phase defects were located at different locations in reference to the absorber lines. A lithography simulator predicted that when the distance between the line center and defect center range from 26 to 102 nm, the prepared 1.8 nm-high and 57.4 nm-wide phase defects would cause errors of more than 10 % in wafer printed critical dimension (CD). The EUV microscope could identify these phase defects with the EUV light intensity losses of more than 17 % in comparison to the space pattern image intensity in the absence of the phase defect. The EUV microscope can predict the existence of the phase defect, and its impact on a wafer printed CD even where the EUV microscope does not completely emulate the image of the EUV scanner.

    Original languageEnglish
    Title of host publicationPhotomask Technology 2013
    DOIs
    Publication statusPublished - 2013 Dec 12
    EventSPIE Conference on Photomask Technology 2013 - Monterey, CA, United States
    Duration: 2013 Sep 102013 Sep 12

    Publication series

    NameProceedings of SPIE - The International Society for Optical Engineering
    Volume8880
    ISSN (Print)0277-786X
    ISSN (Electronic)1996-756X

    Other

    OtherSPIE Conference on Photomask Technology 2013
    Country/TerritoryUnited States
    CityMonterey, CA
    Period13/9/1013/9/12

    Keywords

    • EUV
    • EUV microscope
    • compensation repair
    • defect mitigation
    • phase defect

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Computer Science Applications
    • Applied Mathematics
    • Electrical and Electronic Engineering

    Fingerprint

    Dive into the research topics of 'Extreme ultraviolet mask defect observation using an extreme ultraviolet microscope'. Together they form a unique fingerprint.

    Cite this