Extreme ultraviolet mask defect observation using an extreme ultraviolet microscope

Tsuyoshi Amano, Tsuneo Terasawa, Hidehiro Watanabe, Mitsunori Toyoda, Tetsuo Harada, Takeo Watanabe, Hiroo Kinoshita

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

To predict the effect of a phase defect position relative to the absorber pattern on a wafer printed image, a programmed phase defect mask was fabricated, and was observed using an extreme ultraviolet (EUV) microscope employing EUV light from a beam line BL3 of the New SUBARU at the University of Hyogo. The mask prepared for this work contains programmed phase defects along with half-pitch (hp) 64 nm lines-and-spaces (L/S) absorber patterns. The phase defects were located at different locations in reference to the absorber lines. A lithography simulator predicted that when the distance between the line center and defect center range from 26 to 102 nm, the prepared 1.8 nm-high and 57.4 nm-wide phase defects would cause errors of more than 10 % in wafer printed critical dimension (CD). The EUV microscope could identify these phase defects with the EUV light intensity losses of more than 17 % in comparison to the space pattern image intensity in the absence of the phase defect. The EUV microscope can predict the existence of the phase defect, and its impact on a wafer printed CD even where the EUV microscope does not completely emulate the image of the EUV scanner.

Original languageEnglish
Title of host publicationPhotomask Technology 2013
DOIs
Publication statusPublished - 2013 Dec 12
EventSPIE Conference on Photomask Technology 2013 - Monterey, CA, United States
Duration: 2013 Sep 102013 Sep 12

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8880
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherSPIE Conference on Photomask Technology 2013
CountryUnited States
CityMonterey, CA
Period13/9/1013/9/12

Keywords

  • EUV
  • EUV microscope
  • compensation repair
  • defect mitigation
  • phase defect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Amano, T., Terasawa, T., Watanabe, H., Toyoda, M., Harada, T., Watanabe, T., & Kinoshita, H. (2013). Extreme ultraviolet mask defect observation using an extreme ultraviolet microscope. In Photomask Technology 2013 [88802I] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8880). https://doi.org/10.1117/12.2030819