Extraordinary growth of C60 on a GaAs(001) As-rich 2 × 4 surface

Toshio Sakurai, Qikun Xue, T. Hashizume, Y. Hasegawa

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    16 Citations (Scopus)

    Abstract

    We have systematically investigated, by using scanning tunneling microscopy, the adsorption and film growth of C60 on the various GaAs(001) surface phases prepared by molecular-beam epitaxy. For most phases, the C60 overlayer exhibits the usual close-packed fcc(111) configuration with its lattice constant close to that of the bulk C60 crystal. However, in the case of C60 on the As-rich 2 × 4 substrate, the epitaxial growth is found to be quite different and unique; C60 film takes its (110) crystalline axis; the C60 overlayer is highly strained with a lattice expansion of ∼13%, and this structure is very stable at least up to 10 ML. We will address the underlying formation mechanism of this new structure in terms of a charge transfer from the As-dangling bonds to C60S and a site-specific C60-substrate interaction, as confirmed by molecular dynamic simulations. The present system provides a unique opportunity to study fullerene and/or noble-gas related two-dimensional phenomena, and demonstrates a potential for fabrication of novel fullerene-based devices, such as strained superlattice structures.

    Original languageEnglish
    Pages (from-to)1628-1632
    Number of pages5
    JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    Volume15
    Issue number5
    Publication statusPublished - 1997 Sep 1

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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