The random telegraph noise (RTN) characteristics in numerous metal-oxide-semiconductor field-effect transistors were evaluated accurately with small floor noise of 59 μV. Because of the small floor noise RTN characteristics with small amplitudes could be measured. The time constants: time to emission (τe) and time to capture (τc) were extracted from measurement results with sampling period of 1 μs and sampling time of 600 s, and they were distributed for over six orders of magnitude. Based on the extracted data of τe and τc, there is no correlation between (τe) and (τc). Also, it was clarified that the time constant ratio (τc=τe) were distributed over nine orders of magnitude. Additionally, the gate bias dependence of (τe), (τc), and (τc)=(he) were analyzed. The distribution of (τe) is shifted to larger values with the increase of drain current (ID) and that of (τc) is shifted to smaller values with the increase of I D.
ASJC Scopus subject areas
- Physics and Astronomy(all)