Extraction of time constants ratio over nine orders of magnitude for understanding random telegraph noise in metal-oxide-semiconductor field-effect transistors

The random telegraph noise (RTN) characteristics in numerous metal-oxide-semiconductor field-effect transistors were evaluated accurately with small floor noise of 59 μV. Because of the small floor noise RTN characteristics with small amplitudes could be measured. The time constants: time to emission (τ_e) and time to capture (τ_c) were extracted from measurement results with sampling period of 1 μs and sampling time of 600 s, and they were distributed for over six orders of magnitude. Based on the extracted data of τ_e and τ_c, there is no correlation between (τ_e) and (τc). Also, it was clarified that the time constant ratio (τ_c=τ_e) were distributed over nine orders of magnitude. Additionally, the gate bias dependence of (τ_e), (τ_c), and (τ_c)=_(he) were analyzed. The distribution of (τ_e) is shifted to larger values with the increase of drain current (I_D) and that of (τ_c) is shifted to smaller values with the increase of I _D.