TY - JOUR
T1 - Extraction of drain current and effective mobility in epitaxial graphene channel field-effect transistors on SiC layer grown on silicon substrates
AU - Kang, Hyun Chul
AU - Roman, Olac Vaw
AU - Karasawa, Hiromi
AU - Miyamoto, Yu
AU - Handa, Hiroyuki
AU - Suemitsu, Tetsuya
AU - Fukidome, Hirokazu
AU - Suemitsu, Maki
AU - Otsuji, Taiichi
PY - 2010/4/1
Y1 - 2010/4/1
N2 - We have fabricated and characterized field-effect transistors (FETs) with an epitaxial graphene channel on a SiC layer grown on a Si substrate. Epitaxial graphene can be formed on SiC substrates by thermal decomposition of its surface under an ultrahigh-vacuum (UHV) condition. To incorporate the thermal decomposition of SiC on Si substrates, we used an approach of growing a thin 3C-SiC(111) layer on Si substrates and subsequently annealing them in UHV to form graphene on the surface of the 3C-SiC layer. Backgate-field-effect transistors using the SiC layer as a gate insulator were characterized. Although a large amount of gate-leakage current is observed, the drain current modulation by backgate voltage is confirmed by extracting the channel current from the total drain current. The extracted channel current characteristics also suggest that the extracted effective mobility exceeds the universal mobility of bulk silicon under similar circumstances.
AB - We have fabricated and characterized field-effect transistors (FETs) with an epitaxial graphene channel on a SiC layer grown on a Si substrate. Epitaxial graphene can be formed on SiC substrates by thermal decomposition of its surface under an ultrahigh-vacuum (UHV) condition. To incorporate the thermal decomposition of SiC on Si substrates, we used an approach of growing a thin 3C-SiC(111) layer on Si substrates and subsequently annealing them in UHV to form graphene on the surface of the 3C-SiC layer. Backgate-field-effect transistors using the SiC layer as a gate insulator were characterized. Although a large amount of gate-leakage current is observed, the drain current modulation by backgate voltage is confirmed by extracting the channel current from the total drain current. The extracted channel current characteristics also suggest that the extracted effective mobility exceeds the universal mobility of bulk silicon under similar circumstances.
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U2 - 10.1143/JJAP.49.04DF17
DO - 10.1143/JJAP.49.04DF17
M3 - Article
AN - SCOPUS:77952698558
VL - 49
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 2
M1 - 04DF17
ER -