Extensive study of giant magnetoresistance properties in half-metallic Co2(Fe,Mn)Si-based devices

Y. Sakuraba, M. Ueda, Y. Miura, K. Sato, S. Bosu, K. Saito, M. Shirai, T. J. Konno, K. Takanashi

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137 Citations (Scopus)


Fully epitaxial Co2FexMn1- xSi(CFMS)/Ag/Co2FexMn1 -xSi current-perpendicular-to-plane giant magnetoresistive devices with various Fe/Mn ratios x and top CFMS layer thicknesses t CFMS were prepared. The highest magnetoresistance (MR) ratios, 58% at room temperature and 184% at 30 K, were observed in the sample with x = 0.4 and tCFMS = 3 nm. Enhancement of interface spin-asymmetry was suggested for x = 0.4 compared with that at x = 0. A MR ratio of 58% was also observed even in a very thin trilayer structure, CFMS(4 nm)/Ag(3 nm)/CFMS(2 nm), which is promising for a next-generation magnetic read sensor for high-density hard disk drives.

Original languageEnglish
Article number252408
JournalApplied Physics Letters
Issue number25
Publication statusPublished - 2012 Dec 17

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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