Extensive studies for effects of nitrogen incorporation into Hf-based high-k gate dielectrics

N. Umezawa, K. Shiraishi, H. Watanabe, K. Torii, Y. Akasaka, S. Inumiya, M. Boero, A. Uedono, S. Miyazaki, T. Ohno, T. Chikyow, K. Yamabe, Y. Nara, K. Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Effects of nitrogen incorporation into Hf-based high-k gate dielectrics have been extensively studied via first-principles calculations. Particular emphasis is given to the relationship between incorporation of N atoms and oxygen vacancies (Vos). Three important aspects are outlined in this paper. The first one is the intrinsic effect of N atoms in reducing the leakage current mediated by V0 related gap states. The second one is the suppression of electron charge traps at V0 due to the strong repulsive Coulomb potential from N 3- ions located around V0. The third one is the acceleration of the V0 formation around N ions. From these analyses, we infer that the amount of N incorporation should be tuned in the fabrication of reliable gate insulators. Copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems II
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
Pages63-78
Number of pages16
Edition1
Publication statusPublished - 2006
Event2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society - Denver, CO, United States
Duration: 2006 May 72006 May 12

Publication series

NameECS Transactions
Number1
Volume2
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society
CountryUnited States
CityDenver, CO
Period06/5/706/5/12

ASJC Scopus subject areas

  • Engineering(all)

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    Umezawa, N., Shiraishi, K., Watanabe, H., Torii, K., Akasaka, Y., Inumiya, S., Boero, M., Uedono, A., Miyazaki, S., Ohno, T., Chikyow, T., Yamabe, K., Nara, Y., & Yamada, K. (2006). Extensive studies for effects of nitrogen incorporation into Hf-based high-k gate dielectrics. In Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing (1 ed., pp. 63-78). (ECS Transactions; Vol. 2, No. 1).