Extended vacancy-type defects in silicon induced at low temperatures by electron irradiation

J. Yamasaki, Y. Ohno, S. Takeda, Y. Kimura

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We have observed the formation of extended defects in silicon at low temperatures (below 25 K) by means of in-situ high-resolution transmission electron microscopy (HRTEM). The defects are distorted spheres, occasionally truncated by facets, less than 5nm in diameter. These defects are stable up to 773 K, and they gradually shrink during annealing in the temperature range from 773 to 973 K. From the analysis of HRTEM images of the defects, we have suggested that the defects are voids formed via athermal migration of vacancies under electron irradiation.

Original languageEnglish
Pages (from-to)151-163
Number of pages13
JournalPhilosophical Magazine
Volume83
Issue number2
DOIs
Publication statusPublished - 2003 Jan 11
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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