Extended data retention characteristics after more than 104 write and erase cycles in EEPROMs

S. Aritome, R. Kirisawa, T. Endoh, R. Nakayama, R. Shirota, K. Sakui, K. Ohuchi, F. Masuoka

Research output: Contribution to journalConference articlepeer-review

17 Citations (Scopus)


Improvements in data retention characteristics of a FETMOS cell which has a self-aligned double poly-Si stacked structure are discussed. The improvement results from the use of a uniform write and erase technology. Experiments show that gradual detrapping of electrons from the gate oxide to the substrate effectively suppresses data loss of the erased cell which stores positive charges in the floating gate. It is shown that a uniform write and uniform erase technology using Fowler-Nordheim tunneling current guarantees a wide cell threshold voltage window even after 106 write and erase cycles. This technology realizes a highly reliable EEPROM with extended data retention characteristics.

Original languageEnglish
Pages (from-to)259-264
Number of pages6
JournalAnnual Proceedings - Reliability Physics (Symposium)
Publication statusPublished - 1990
Externally publishedYes
EventTwenty Eight International Reliability Physics Symposium 1990 - New Orleans, LA, USA
Duration: 1990 Mar 271990 Mar 29

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality


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