The electron transport properties of g-C3N4 under high pressure were analyzed by in situ resistance measurement both at ambient temperature and 77 K. It was observed that as the pressure increased from ambient to 30 Gpa, three abnormal resistance changes were found at room temperature and two were found at 77 K. The larger resistance value at 77 K indicated that the g-C3N4 and its potential high-pressure phases exhibited semiconductor transport characteristics. The results show that the electron transport behavior of g-C3N4 changes with the pressure.
- Carbon composites
- Electrical (electronic) properties, Phase transitions
- High pressure
ASJC Scopus subject areas
- Materials Science(all)