Exploring pressure-induced phase transitions of C3N4 with graphite structure by electrical resistance measurements

Yonghao Han; Chunxiao Gao; Hongan Ma; Jifeng Luo; Aimin Hao; Yanchun Li; Xiaodong Li; Jing Liu; Ming Li; Hongwu Liu; Hongsen Xie; Guangtian Zou

doi:10.1016/j.carbon.2004.12.003

Exploring pressure-induced phase transitions of C₃N₄ with graphite structure by electrical resistance measurements

Yonghao Han, Chunxiao Gao, Hongan Ma, Jifeng Luo, Aimin Hao, Yanchun Li, Xiaodong Li, Jing Liu, Ming Li, Hongwu Liu, Hongsen Xie, Guangtian Zou

SCI - Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The electron transport properties of g-C₃N₄ under high pressure were analyzed by in situ resistance measurement both at ambient temperature and 77 K. It was observed that as the pressure increased from ambient to 30 Gpa, three abnormal resistance changes were found at room temperature and two were found at 77 K. The larger resistance value at 77 K indicated that the g-C₃N₄ and its potential high-pressure phases exhibited semiconductor transport characteristics. The results show that the electron transport behavior of g-C₃N₄ changes with the pressure.

Original language	English
Pages (from-to)	1108-1110
Number of pages	3
Journal	Carbon
Volume	43
Issue number	5
DOIs	https://doi.org/10.1016/j.carbon.2004.12.003
Publication status	Published - 2005

Keywords

Carbon composites
Electrical (electronic) properties, Phase transitions
High pressure

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)

Access to Document

10.1016/j.carbon.2004.12.003

Cite this

@article{8d75bfa0a49c4b448753be91c913fe1a,

title = "Exploring pressure-induced phase transitions of C3N4 with graphite structure by electrical resistance measurements",

abstract = "The electron transport properties of g-C3N4 under high pressure were analyzed by in situ resistance measurement both at ambient temperature and 77 K. It was observed that as the pressure increased from ambient to 30 Gpa, three abnormal resistance changes were found at room temperature and two were found at 77 K. The larger resistance value at 77 K indicated that the g-C3N4 and its potential high-pressure phases exhibited semiconductor transport characteristics. The results show that the electron transport behavior of g-C3N4 changes with the pressure.",

keywords = "Carbon composites, Electrical (electronic) properties, Phase transitions, High pressure",

author = "Yonghao Han and Chunxiao Gao and Hongan Ma and Jifeng Luo and Aimin Hao and Yanchun Li and Xiaodong Li and Jing Liu and Ming Li and Hongwu Liu and Hongsen Xie and Guangtian Zou",

note = "Funding Information: This work was supported by the Natural Science Foundation of People{\textquoteright}s Republic of China (Grant Nos. 10104008, 40473034) and the International Science and Technology Cooperation Project of China (Grant No. 2001CB711201).",

year = "2005",

doi = "10.1016/j.carbon.2004.12.003",

language = "English",

volume = "43",

pages = "1108--1110",

journal = "Carbon",

issn = "0008-6223",

publisher = "Elsevier Limited",

number = "5",

}

TY - JOUR

T1 - Exploring pressure-induced phase transitions of C3N4 with graphite structure by electrical resistance measurements

AU - Han, Yonghao

AU - Gao, Chunxiao

AU - Ma, Hongan

AU - Luo, Jifeng

AU - Hao, Aimin

AU - Li, Yanchun

AU - Li, Xiaodong

AU - Liu, Jing

AU - Li, Ming

AU - Liu, Hongwu

AU - Xie, Hongsen

AU - Zou, Guangtian

N1 - Funding Information: This work was supported by the Natural Science Foundation of People’s Republic of China (Grant Nos. 10104008, 40473034) and the International Science and Technology Cooperation Project of China (Grant No. 2001CB711201).

PY - 2005

Y1 - 2005

N2 - The electron transport properties of g-C3N4 under high pressure were analyzed by in situ resistance measurement both at ambient temperature and 77 K. It was observed that as the pressure increased from ambient to 30 Gpa, three abnormal resistance changes were found at room temperature and two were found at 77 K. The larger resistance value at 77 K indicated that the g-C3N4 and its potential high-pressure phases exhibited semiconductor transport characteristics. The results show that the electron transport behavior of g-C3N4 changes with the pressure.

AB - The electron transport properties of g-C3N4 under high pressure were analyzed by in situ resistance measurement both at ambient temperature and 77 K. It was observed that as the pressure increased from ambient to 30 Gpa, three abnormal resistance changes were found at room temperature and two were found at 77 K. The larger resistance value at 77 K indicated that the g-C3N4 and its potential high-pressure phases exhibited semiconductor transport characteristics. The results show that the electron transport behavior of g-C3N4 changes with the pressure.

KW - Carbon composites

KW - Electrical (electronic) properties, Phase transitions

KW - High pressure

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DO - 10.1016/j.carbon.2004.12.003

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VL - 43

SP - 1108

EP - 1110

JO - Carbon

JF - Carbon

SN - 0008-6223

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ER -