Experiments on localization in Landau subbands with the Landau quantum number 0 and 1 of Si inversion layers

J. Wakabayashi, A. Fukano, S. Kawaji, Yoji Koike, T. Fukase

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Temperature dependence of the Hall conductivity σxy for (0↓ -) and (1↑ -) Landau subbands in Si-MOS inversion layers has been measured as a function of the magnetic field as well as the gate voltage in magnetic fields up to 27 T. The results show that the critical behavior of localization depends on the Landau quantum number.

Original languageEnglish
Pages (from-to)60-62
Number of pages3
JournalSurface Science
Volume229
Issue number1-3
DOIs
Publication statusPublished - 1990 Apr 2

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

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