Temperature dependence of the Hall conductivity σxy for (0↓ -) and (1↑ -) Landau subbands in Si-MOS inversion layers has been measured as a function of the magnetic field as well as the gate voltage in magnetic fields up to 27 T. The results show that the critical behavior of localization depends on the Landau quantum number.
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Condensed Matter Physics
- Surfaces and Interfaces