Experiments on localization in Landau subbands with the Landau quantum number 0 and 1 of Si inversion layers

J. Wakabayashi; A. Fukano; S. Kawaji; Yoji Koike; T. Fukase

doi:10.1016/0039-6028(90)90833-T

Experiments on localization in Landau subbands with the Landau quantum number 0 and 1 of Si inversion layers

J. Wakabayashi, A. Fukano, S. Kawaji, Yoji Koike, T. Fukase

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Temperature dependence of the Hall conductivity σ_xy for (0↓ -) and (1↑ -) Landau subbands in Si-MOS inversion layers has been measured as a function of the magnetic field as well as the gate voltage in magnetic fields up to 27 T. The results show that the critical behavior of localization depends on the Landau quantum number.

Original language	English
Pages (from-to)	60-62
Number of pages	3
Journal	Surface Science
Volume	229
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(90)90833-T
Publication status	Published - 1990 Apr 2

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Condensed Matter Physics
Surfaces and Interfaces

Access to Document

10.1016/0039-6028(90)90833-T

Fingerprint Dive into the research topics of 'Experiments on localization in Landau subbands with the Landau quantum number 0 and 1 of Si inversion layers'. Together they form a unique fingerprint.

Cite this

@article{6a05b552b183492bbde05d8c30ac4158,

title = "Experiments on localization in Landau subbands with the Landau quantum number 0 and 1 of Si inversion layers",

abstract = "Temperature dependence of the Hall conductivity σxy for (0↓ -) and (1↑ -) Landau subbands in Si-MOS inversion layers has been measured as a function of the magnetic field as well as the gate voltage in magnetic fields up to 27 T. The results show that the critical behavior of localization depends on the Landau quantum number.",

author = "J. Wakabayashi and A. Fukano and S. Kawaji and Yoji Koike and T. Fukase",

year = "1990",

month = apr,

day = "2",

doi = "10.1016/0039-6028(90)90833-T",

language = "English",

volume = "229",

pages = "60--62",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - Experiments on localization in Landau subbands with the Landau quantum number 0 and 1 of Si inversion layers

AU - Wakabayashi, J.

AU - Fukano, A.

AU - Kawaji, S.

AU - Koike, Yoji

AU - Fukase, T.

PY - 1990/4/2

Y1 - 1990/4/2

N2 - Temperature dependence of the Hall conductivity σxy for (0↓ -) and (1↑ -) Landau subbands in Si-MOS inversion layers has been measured as a function of the magnetic field as well as the gate voltage in magnetic fields up to 27 T. The results show that the critical behavior of localization depends on the Landau quantum number.

AB - Temperature dependence of the Hall conductivity σxy for (0↓ -) and (1↑ -) Landau subbands in Si-MOS inversion layers has been measured as a function of the magnetic field as well as the gate voltage in magnetic fields up to 27 T. The results show that the critical behavior of localization depends on the Landau quantum number.

UR - http://www.scopus.com/inward/record.url?scp=17644426443&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17644426443&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(90)90833-T

DO - 10.1016/0039-6028(90)90833-T

M3 - Article

AN - SCOPUS:17644426443

VL - 229

SP - 60

EP - 62

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-3

ER -

Experiments on localization in Landau subbands with the Landau quantum number 0 and 1 of Si inversion layers

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this