Experiments on localization in Landau subbands with the Landau quantum number 0 and 1 of Si inversion layers

J. Wakabayashi; A. Fukano; S. Kawaji; Y. Koike; T. Fukase

doi:10.1016/0039-6028(90)90833-T

Experiments on localization in Landau subbands with the Landau quantum number 0 and 1 of Si inversion layers

J. Wakabayashi, A. Fukano, S. Kawaji, Y. Koike, T. Fukase

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Temperature dependence of the Hall conductivity σ_xy for (0↓ -) and (1↑ -) Landau subbands in Si-MOS inversion layers has been measured as a function of the magnetic field as well as the gate voltage in magnetic fields up to 27 T. The results show that the critical behavior of localization depends on the Landau quantum number.

Original language	English
Pages (from-to)	60-62
Number of pages	3
Journal	Surface Science
Volume	229
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(90)90833-T
Publication status	Published - 1990 Apr 2

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(90)90833-T

Cite this

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title = "Experiments on localization in Landau subbands with the Landau quantum number 0 and 1 of Si inversion layers",

abstract = "Temperature dependence of the Hall conductivity σxy for (0↓ -) and (1↑ -) Landau subbands in Si-MOS inversion layers has been measured as a function of the magnetic field as well as the gate voltage in magnetic fields up to 27 T. The results show that the critical behavior of localization depends on the Landau quantum number.",

author = "J. Wakabayashi and A. Fukano and S. Kawaji and Y. Koike and T. Fukase",

note = "Funding Information: The authorst hankP rofessorY . Muto andt hes taff of HFLSM for the useo f the high magneticfi eld fa-cilitiesa t HFSLM, IMR, Tohoku university.O ne of the authors( J.W.) is indebtedt o the YamadaS ci-enceF oundationfo r thef inancials upportT. his work is supportedin partb y a Grant-in-Aidf or Scientific Researchf rom the Ministry of Education,C ulture and Science.",

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doi = "10.1016/0039-6028(90)90833-T",

language = "English",

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TY - JOUR

T1 - Experiments on localization in Landau subbands with the Landau quantum number 0 and 1 of Si inversion layers

AU - Wakabayashi, J.

AU - Fukano, A.

AU - Kawaji, S.

AU - Koike, Y.

AU - Fukase, T.

N1 - Funding Information: The authorst hankP rofessorY . Muto andt hes taff of HFLSM for the useo f the high magneticfi eld fa-cilitiesa t HFSLM, IMR, Tohoku university.O ne of the authors( J.W.) is indebtedt o the YamadaS ci-enceF oundationfo r thef inancials upportT. his work is supportedin partb y a Grant-in-Aidf or Scientific Researchf rom the Ministry of Education,C ulture and Science.

PY - 1990/4/2

Y1 - 1990/4/2

N2 - Temperature dependence of the Hall conductivity σxy for (0↓ -) and (1↑ -) Landau subbands in Si-MOS inversion layers has been measured as a function of the magnetic field as well as the gate voltage in magnetic fields up to 27 T. The results show that the critical behavior of localization depends on the Landau quantum number.

AB - Temperature dependence of the Hall conductivity σxy for (0↓ -) and (1↑ -) Landau subbands in Si-MOS inversion layers has been measured as a function of the magnetic field as well as the gate voltage in magnetic fields up to 27 T. The results show that the critical behavior of localization depends on the Landau quantum number.

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U2 - 10.1016/0039-6028(90)90833-T

DO - 10.1016/0039-6028(90)90833-T

M3 - Article

AN - SCOPUS:17644426443

VL - 229

SP - 60

EP - 62

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-3

ER -

Experiments on localization in Landau subbands with the Landau quantum number 0 and 1 of Si inversion layers

Abstract

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