Experimental verification of a governing parameter of electromigration damage in metal lines of electronic packages

Translated title of the contribution: Experimental verification of a governing parameter of electromigration damage in metal lines of electronic packages

Kazuhiko Sasagawa, Naoaki Nakamura, Masumi Saka, Hiroyuki Abé

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

A governing parameter of electomigration damage in metal lines of electronic packages for the prediction of void or hillock formation has been proposed considering two-dimensional distributions of current density and temperature, where not only the polycrystalline line but also the bamboo line structure was considered in a simplified manner. The usefulness of the parameter has also been verified through good agreement of predicted void volume with that measured in the experiment, where the singularity of current density at the corner of an angled polycrystalline line was varied. In the present paper, the effects due to reduction of current concentration at the corner of angled line and also the singularity of temperature gradient on the void formation are investigated experimentally. In addition to the experimental data obtained so far, the present experimental results are used for the verification of usefulness of the parameter in more detail. The predicted void volume is always found to be in good agreement with the experimental result and thereby the rationality of using the parameter is established.

Translated title of the contributionExperimental verification of a governing parameter of electromigration damage in metal lines of electronic packages
Original languageJapanese
Pages (from-to)469-476
Number of pages8
JournalNihon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A
Volume65
Issue number631
DOIs
Publication statusPublished - 1999

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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