Experimental study of effective carrier mobility of multi-fin-type double-gate metal-oxide-semiconductor field-effect transistors with (111) channel surface fabricated by orientation-dependent wet etching

Yongxun Liu, Etsuro Sugimata, Kenichi Ishii, Meishoku Masahara, Kazuhiko Endo, Takashi Matsukawa, Hiromi Yamauchi, Shinichi O'Uchi, Eiichi Suzuki

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We present an experimental study of effective carrier mobility (μeff) of multi-fin-type double-gate metal-oxide-semiconductor field-effect transistors (FinFETs) with a (111) channel surface fabricated by orientation-dependent wet etching. The peak values of the obtained μeff of electrons and holes are approximately 300 and 160cm 2/(V s), respectively, which are close to those in (111) bulk metal-oxide-semiconductor field-effect transistors (MOSFETs). Moreover, the effective electric field (μeff) dependence of theμ eff of electrons and holes shows a good agreement with the mobility universal curves of (111) bulk MOSFETs. These results indicate that the quality and channel surface roughness of Si-fins by orientation-dependent wet etching are excellent. The obtained results of μeff are very useful for the modeling and design of FinFET-complementary metal-oxide-semiconductor (CMOS) circuits and the developed wet etching technique is very attractive inthe fabrication of ultrathin and high-quality Si-fin channels.

Original languageEnglish
Pages (from-to)3084-3087
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 B
DOIs
Publication statusPublished - 2006 Apr 25
Externally publishedYes

Keywords

  • (110)-orientated SOI
  • Double-gate MOSFET
  • FinFET
  • Mobility
  • Orientation-dependent wet etching
  • Rectangular cross-section Si-fin channel

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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