TY - JOUR
T1 - Experimental study of effective carrier mobility of multi-fin-type double-gate metal-oxide-semiconductor field-effect transistors with (111) channel surface fabricated by orientation-dependent wet etching
AU - Liu, Yongxun
AU - Sugimata, Etsuro
AU - Ishii, Kenichi
AU - Masahara, Meishoku
AU - Endo, Kazuhiko
AU - Matsukawa, Takashi
AU - Yamauchi, Hiromi
AU - O'Uchi, Shinichi
AU - Suzuki, Eiichi
PY - 2006/4/25
Y1 - 2006/4/25
N2 - We present an experimental study of effective carrier mobility (μeff) of multi-fin-type double-gate metal-oxide-semiconductor field-effect transistors (FinFETs) with a (111) channel surface fabricated by orientation-dependent wet etching. The peak values of the obtained μeff of electrons and holes are approximately 300 and 160cm 2/(V s), respectively, which are close to those in (111) bulk metal-oxide-semiconductor field-effect transistors (MOSFETs). Moreover, the effective electric field (μeff) dependence of theμ eff of electrons and holes shows a good agreement with the mobility universal curves of (111) bulk MOSFETs. These results indicate that the quality and channel surface roughness of Si-fins by orientation-dependent wet etching are excellent. The obtained results of μeff are very useful for the modeling and design of FinFET-complementary metal-oxide-semiconductor (CMOS) circuits and the developed wet etching technique is very attractive inthe fabrication of ultrathin and high-quality Si-fin channels.
AB - We present an experimental study of effective carrier mobility (μeff) of multi-fin-type double-gate metal-oxide-semiconductor field-effect transistors (FinFETs) with a (111) channel surface fabricated by orientation-dependent wet etching. The peak values of the obtained μeff of electrons and holes are approximately 300 and 160cm 2/(V s), respectively, which are close to those in (111) bulk metal-oxide-semiconductor field-effect transistors (MOSFETs). Moreover, the effective electric field (μeff) dependence of theμ eff of electrons and holes shows a good agreement with the mobility universal curves of (111) bulk MOSFETs. These results indicate that the quality and channel surface roughness of Si-fins by orientation-dependent wet etching are excellent. The obtained results of μeff are very useful for the modeling and design of FinFET-complementary metal-oxide-semiconductor (CMOS) circuits and the developed wet etching technique is very attractive inthe fabrication of ultrathin and high-quality Si-fin channels.
KW - (110)-orientated SOI
KW - Double-gate MOSFET
KW - FinFET
KW - Mobility
KW - Orientation-dependent wet etching
KW - Rectangular cross-section Si-fin channel
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U2 - 10.1143/JJAP.45.3084
DO - 10.1143/JJAP.45.3084
M3 - Article
AN - SCOPUS:33646947315
VL - 45
SP - 3084
EP - 3087
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 B
ER -