Experimental study of charge trapping type FinFET flash memory

Yongxun Liu, Toshihide Nabatame, Takashi Matsukawa, Kazuhiko Endo, Sinichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Toyohiro Chikyow, Meishoku Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The 3D fin-channel SONOS, MONOS and MANOS type flash memories with different gate and blocking layer materials have been successfully fabricated and their electrical characteristics have been comparatively investigated. It was found that MANOS type flash memory with an Al2O3 blocking layer and a TiN metal gate shows the better performance as compared to the SONOS and MONOS type ones thanks to the high-k effect of Al2O3 and the high gate work function of TiN.

Original languageEnglish
Title of host publication2014 IEEE International Nanoelectronics Conference, INEC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479950379
DOIs
Publication statusPublished - 2016 Apr 26
Externally publishedYes
EventIEEE International Nanoelectronics Conference, INEC 2014 - Sapporo, Japan
Duration: 2014 Jul 282014 Jul 31

Publication series

Name2014 IEEE International Nanoelectronics Conference, INEC 2014

Other

OtherIEEE International Nanoelectronics Conference, INEC 2014
CountryJapan
CitySapporo
Period14/7/2814/7/31

Keywords

  • 3D fin-channel
  • Blocking layer
  • Charge trapping
  • FinFET
  • Flash memory
  • Gate work function
  • High-k

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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