Experimental study for high effective mobility with directly deposited HfO2/La2O3 MOSFET

T. Kawanago, J. Song, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We experimentally examine the effective mobility in nMOSFETs with La2O3 gate dielectrics without SiOx-based interfacial layer. The reduced mobility is mainly caused by fixed charges in High-k gate dielectrics and the contribution of the interface state density is approximately 30% at Ns = 5 × 1011 cm-2 in the low 1011 cm-2 eV-1 order. It is considered that one of the effective methods for improving mobility is to utilize La-silicate layer formed by high temperature annealing. However, there essentially exists trade-off relationship between high temperature annealing and small EOT.

Original languageEnglish
Pages (from-to)1629-1631
Number of pages3
JournalMicroelectronic Engineering
Volume86
Issue number7-9
DOIs
Publication statusPublished - 2009 Jul
Externally publishedYes

Keywords

  • Direct contact
  • Effective mobility
  • High-k

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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    Kawanago, T., Song, J., Kakushima, K., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., & Iwai, H. (2009). Experimental study for high effective mobility with directly deposited HfO2/La2O3 MOSFET. Microelectronic Engineering, 86(7-9), 1629-1631. https://doi.org/10.1016/j.mee.2009.03.106