Experimental realization of complementary p- and n- tunnel FinFETs with subthreshold slopes of less than 60 mV/decade and very low (pA/μm) off-current on a Si CMOS platform

Y. Morita, T. Mori, K. Fukuda, W. Mizubayashi, S. Migita, T. Matsukawa, K. Endo, S. O'Uchi, Y. Liu, M. Masahara, H. Ota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Complementary (p- and n-type) tunnel FinFETs operating with subthreshold slopes (SSs) of less than 60 mV/decade and very low off-currents (on the order of a few pA/μm) have been experimentally realized on the Si CMOS platform. Improvements in the SSs have been realized by optimizing epitaxial channel growth on heavily arsenic- and boron-doped source surfaces for purging interface defects at the epitaxial tunnel junctions. By improving the interface quality, SSs of 58 and 56 mV/decade and on/off current ratios (ON/OFF) of 2 × 106 and 3 × 104 (with VD = 0.2 V) were respectively obtained for p- and n- tunnel FETs (TFETs) simultaneously.

Original languageEnglish
Title of host publication2014 IEEE International Electron Devices Meeting, IEDM 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages9.7.1-9.7.4
EditionFebruary
ISBN (Electronic)9781479980017
DOIs
Publication statusPublished - 2015 Feb 20
Externally publishedYes
Event2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
Duration: 2014 Dec 152014 Dec 17

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
NumberFebruary
Volume2015-February
ISSN (Print)0163-1918

Other

Other2014 60th IEEE International Electron Devices Meeting, IEDM 2014
CountryUnited States
CitySan Francisco
Period14/12/1514/12/17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Morita, Y., Mori, T., Fukuda, K., Mizubayashi, W., Migita, S., Matsukawa, T., Endo, K., O'Uchi, S., Liu, Y., Masahara, M., & Ota, H. (2015). Experimental realization of complementary p- and n- tunnel FinFETs with subthreshold slopes of less than 60 mV/decade and very low (pA/μm) off-current on a Si CMOS platform. In 2014 IEEE International Electron Devices Meeting, IEDM 2014 (February ed., pp. 9.7.1-9.7.4). [7047020] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047020