We succeeded in observing gate-controlled electron spin interference in nanolithographically defined square loop arrays that were fabricated in In0.52 Al0.48 As In0.53 Ga0.47 As In0.52 Al0.48 As quantum wells (QWs). In this experiment, we demonstrated electron spin precession in ballistic channels within the QW that is caused by the Rashba effect. It turned out that the spin precession angle θ was gate controllable by more than 0.75π for a length of 1.5 μm. Thus, the demonstration of the large controllability of θ by the applied gate voltage was carried out in a more direct way using spin interference of an electron wave function than the conventional beating analysis of the Shubnikov-de Haas oscillations.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2006 Jul 20|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics