The intensity profile of a low-energy electron beam (e-beam) extracted from the tip apex of a scanning tunneling microscope (STM) in the field emission mode was measured in an ultrahigh-vacuum environment. The sizes of areas where the native Si oxide was removed by exposure to the low-energy e-beam were measured as a function of the e-beam exposure time, and it was found that the e-beam has a Gaussian-type lateral profile. The results show that the e-beam profile can be controlled by adjusting the parameters of the e-beam emission and that the sizes of the Si oxide opening windows can be adjusted by varying the e-beam exposure time.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - 1999 Oct|
ASJC Scopus subject areas
- Physics and Astronomy(all)