Abstract
The intensity profile of a low-energy electron beam (e-beam) extracted from the tip apex of a scanning tunneling microscope (STM) in the field emission mode was measured in an ultrahigh-vacuum environment. The sizes of areas where the native Si oxide was removed by exposure to the low-energy e-beam were measured as a function of the e-beam exposure time, and it was found that the e-beam has a Gaussian-type lateral profile. The results show that the e-beam profile can be controlled by adjusting the parameters of the e-beam emission and that the sizes of the Si oxide opening windows can be adjusted by varying the e-beam exposure time.
| Original language | English |
|---|---|
| Pages (from-to) | 6172-6173 |
| Number of pages | 2 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 38 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 1999 Oct |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Kawamoto, I., Nan, L., Yoshinobu, T., & Iwasaki, H. (1999). Experimental measurement of the intensity profiles of a low-energy electron beam extracted from a scanning tunneling microscope tip by field emission. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 38(10), 6172-6173. https://doi.org/10.1143/jjap.38.6172