TY - JOUR
T1 - Experimental measurement of the intensity profiles of a low-energy electron beam extracted from a scanning tunneling microscope tip by field emission
AU - Kawamoto, Ippei
AU - Nan, Lai
AU - Yoshinobu, Tatsuo
AU - Iwasaki, Hiroshi
PY - 1999/10
Y1 - 1999/10
N2 - The intensity profile of a low-energy electron beam (e-beam) extracted from the tip apex of a scanning tunneling microscope (STM) in the field emission mode was measured in an ultrahigh-vacuum environment. The sizes of areas where the native Si oxide was removed by exposure to the low-energy e-beam were measured as a function of the e-beam exposure time, and it was found that the e-beam has a Gaussian-type lateral profile. The results show that the e-beam profile can be controlled by adjusting the parameters of the e-beam emission and that the sizes of the Si oxide opening windows can be adjusted by varying the e-beam exposure time.
AB - The intensity profile of a low-energy electron beam (e-beam) extracted from the tip apex of a scanning tunneling microscope (STM) in the field emission mode was measured in an ultrahigh-vacuum environment. The sizes of areas where the native Si oxide was removed by exposure to the low-energy e-beam were measured as a function of the e-beam exposure time, and it was found that the e-beam has a Gaussian-type lateral profile. The results show that the e-beam profile can be controlled by adjusting the parameters of the e-beam emission and that the sizes of the Si oxide opening windows can be adjusted by varying the e-beam exposure time.
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U2 - 10.1143/jjap.38.6172
DO - 10.1143/jjap.38.6172
M3 - Article
AN - SCOPUS:0033323515
VL - 38
SP - 6172
EP - 6173
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 10
ER -