Experimental investigations of 2.5 kV-100 A PT type and NPT type IGBTs

Yoshikazu Takahashi, Koh Yoshikawa, Takeharu Koga, Masayuki Soutome, Yasukazu Seki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

The electrical characteristics of 2.5 kV-100 A μ-stack IGBTs having Punch-Through (PT) and Non-Punch-Through (NPT) types of device structures have been experimentally investigated. By optimizing the p+ collector layer of the NPT type IGBT, the trade-off relationship between the saturation voltage and the turn-off energy can be obtained to fit on the curve of the PT type IGBT. The Reverse Biased Safe-Operating-Areas (RBSOAs) of the PT type and NPT type IGBTs fabricated are also very wide having a large turn-off capability of 800 A at the DC bath voltage of 1250 V.

Original languageEnglish
Title of host publicationIEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)
Pages70-74
Number of pages5
Publication statusPublished - 1995 Jan 1
Externally publishedYes
EventProceedings of the 1995 IEEE International Symposium on Power Semicomductor Devices and ICs - Yokohama, Jpn
Duration: 1995 May 231995 May 25

Publication series

NameIEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Other

OtherProceedings of the 1995 IEEE International Symposium on Power Semicomductor Devices and ICs
CityYokohama, Jpn
Period95/5/2395/5/25

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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