Experimental investigation of spin Hall effect in indium tin oxide thin film

Z. Qiu; T. An; K. Uchida; D. Hou; Y. Shiomi; Y. Fujikawa; E. Saitoh

doi:10.1063/1.4827808

Experimental investigation of spin Hall effect in indium tin oxide thin film

Z. Qiu, T. An, K. Uchida, D. Hou, Y. Shiomi, Y. Fujikawa, E. Saitoh

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The inverse spin Hall effect (ISHE) induced by spin pumping in indium tin oxide (ITO) films has been investigated quantitatively. We measured ferromagnetic resonance and electromotive force spectra with changing the ITO thickness in ITO/permalloy bilayer films. The intensity of the observed electromotive force changes systematically with the ITO film thickness, which is consistent with the prediction of ISHE. By using an equivalent circuit model, the spin Hall angle and diffusion length of the ITO film are estimated.

Original language	English
Article number	182404
Journal	Applied Physics Letters
Volume	103
Issue number	18
DOIs	https://doi.org/10.1063/1.4827808
Publication status	Published - 2013 Oct 28

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4827808

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title = "Experimental investigation of spin Hall effect in indium tin oxide thin film",

abstract = "The inverse spin Hall effect (ISHE) induced by spin pumping in indium tin oxide (ITO) films has been investigated quantitatively. We measured ferromagnetic resonance and electromotive force spectra with changing the ITO thickness in ITO/permalloy bilayer films. The intensity of the observed electromotive force changes systematically with the ITO film thickness, which is consistent with the prediction of ISHE. By using an equivalent circuit model, the spin Hall angle and diffusion length of the ITO film are estimated.",

author = "Z. Qiu and T. An and K. Uchida and D. Hou and Y. Shiomi and Y. Fujikawa and E. Saitoh",

note = "Funding Information: This work was supported by a Grant-in-Aid for Young Scientists (A) (25707029) from MEXT, Japan, a Grant-in-Aid for Scientific Research (A) (24244051) from MEXT, Japan, PRESTO-JST “Phase Interfaces for Highly Efficient Energy Utilization,” CREST-JST “Creation of Nanosystems with Novel Functions through Process Integration,” LC-IMR of Tohoku University, The Murata Science Foundation, The Mazda Foundation, and The Sumitomo Foundation.",

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doi = "10.1063/1.4827808",

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T1 - Experimental investigation of spin Hall effect in indium tin oxide thin film

AU - Qiu, Z.

AU - An, T.

AU - Uchida, K.

AU - Hou, D.

AU - Shiomi, Y.

AU - Fujikawa, Y.

AU - Saitoh, E.

N1 - Funding Information: This work was supported by a Grant-in-Aid for Young Scientists (A) (25707029) from MEXT, Japan, a Grant-in-Aid for Scientific Research (A) (24244051) from MEXT, Japan, PRESTO-JST “Phase Interfaces for Highly Efficient Energy Utilization,” CREST-JST “Creation of Nanosystems with Novel Functions through Process Integration,” LC-IMR of Tohoku University, The Murata Science Foundation, The Mazda Foundation, and The Sumitomo Foundation.

PY - 2013/10/28

Y1 - 2013/10/28

N2 - The inverse spin Hall effect (ISHE) induced by spin pumping in indium tin oxide (ITO) films has been investigated quantitatively. We measured ferromagnetic resonance and electromotive force spectra with changing the ITO thickness in ITO/permalloy bilayer films. The intensity of the observed electromotive force changes systematically with the ITO film thickness, which is consistent with the prediction of ISHE. By using an equivalent circuit model, the spin Hall angle and diffusion length of the ITO film are estimated.

AB - The inverse spin Hall effect (ISHE) induced by spin pumping in indium tin oxide (ITO) films has been investigated quantitatively. We measured ferromagnetic resonance and electromotive force spectra with changing the ITO thickness in ITO/permalloy bilayer films. The intensity of the observed electromotive force changes systematically with the ITO film thickness, which is consistent with the prediction of ISHE. By using an equivalent circuit model, the spin Hall angle and diffusion length of the ITO film are estimated.

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Experimental investigation of spin Hall effect in indium tin oxide thin film

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