Experimental investigation of effect of channel doping concentration on random telegraph signal noise

Kenichi Abe, Akinobu Teramoto, Shunichi Watabe, Takafumi Fujisawa, Shigetoshi Sugawa, Yutaka Kamata, Katsuhiko Shibusawa, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

Random telegraph signal (RTS) noise has become one of the most important problems in the continuous scaling down of field-effect transistors (FETs). In this study, we investigate experimentally the relationship between RTS amplitude and channel doping concentration (NA), which is a key parameter related to threshold voltage adjustment and short-channel effects, in 393,216 n-type FETs by a high-speed measurement method. We demonstrate that NA has a significant effect on RTS amplitude even at approximately the same interface and bulk trap densities of the gate insulator films, which are evaluated by the charge pumping method, by the quasi-static capacitance-voltage method, and on the basis of 1=f noise characteristics. An increase in RTS amplitude may arise from a more advanced channel nonuniformity as NA increases.

Original languageEnglish
Article number04DC07
JournalJapanese journal of applied physics
Volume49
Issue number4 PART 2
DOIs
Publication statusPublished - 2010 Apr

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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