Experimental determination of valence band discontinuities at Cu(Al,Ga)(S,Se)2/GaAs(001) heterointerfaces using ultraviolet photoemission spectroscopy

Mutsumi Sugiyama, Hisayuki Nakanishi, Shigefusa F. Chichibu

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25 Citations (Scopus)


Ultraviolet photoemission spectroscopy measurement was carried out for c(001) plane Cu(Al,Ga)(S,Se)2 chalcopyrite structure epilayers grown on GaAs(001) substrates to determine valence band discontinuities, ΔEv, at the heterointerfaces. The values of ΔEv were estimated to be about 1.2 eV for CuAlS2/GaAs, 1.0 eV for CuAlSe2/GaAs, 1.1 eV for CuGaS2/GaAs and 0.3 eV for CuGaSe2/GaAs. From these values and bandgap energies of the corresponding compounds, Cu(Al,Ga)(S,Se)2 system is considered to offer the TYPE-I heterostructures between the corresponding narrow bandgap materials and wide bandgap ones.

Original languageEnglish
Pages (from-to)L428-L430
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number5 A
Publication statusPublished - 2001 May 1
Externally publishedYes


  • Band discontinuity
  • Chalcopyrite
  • Cu(Al,Ga)(S,Se)
  • Heterointerface
  • UPS

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)


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