Experimental determination of valence band discontinuities at Cu(Al,Ga)(S,Se)2/GaAs(001) heterointerfaces using ultraviolet photoemission spectroscopy

Mutsumi Sugiyama; Hisayuki Nakanishi; Shigefusa F. Chichibu

doi:10.1143/jjap.40.l428

Experimental determination of valence band discontinuities at Cu(Al,Ga)(S,Se)₂/GaAs(001) heterointerfaces using ultraviolet photoemission spectroscopy

Mutsumi Sugiyama, Hisayuki Nakanishi, Shigefusa F. Chichibu

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Ultraviolet photoemission spectroscopy measurement was carried out for c(001) plane Cu(Al,Ga)(S,Se)₂ chalcopyrite structure epilayers grown on GaAs(001) substrates to determine valence band discontinuities, ΔE_v, at the heterointerfaces. The values of ΔE_v were estimated to be about 1.2 eV for CuAlS₂/GaAs, 1.0 eV for CuAlSe₂/GaAs, 1.1 eV for CuGaS₂/GaAs and 0.3 eV for CuGaSe₂/GaAs. From these values and bandgap energies of the corresponding compounds, Cu(Al,Ga)(S,Se)₂ system is considered to offer the TYPE-I heterostructures between the corresponding narrow bandgap materials and wide bandgap ones.

Original language	English
Pages (from-to)	L428-L430
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	40
Issue number	5 A
DOIs	https://doi.org/10.1143/jjap.40.l428
Publication status	Published - 2001 May 1
Externally published	Yes

Keywords

Band discontinuity
Chalcopyrite
Cu(Al,Ga)(S,Se)
Heterointerface
UPS

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.40.l428

Cite this

Experimental determination of valence band discontinuities at Cu(Al,Ga)(S,Se)₂/GaAs(001) heterointerfaces using ultraviolet photoemission spectroscopy. / Sugiyama, Mutsumi; Nakanishi, Hisayuki; Chichibu, Shigefusa F.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 40, No. 5 A, 01.05.2001, p. L428-L430.

Research output: Contribution to journal › Article › peer-review

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abstract = "Ultraviolet photoemission spectroscopy measurement was carried out for c(001) plane Cu(Al,Ga)(S,Se)2 chalcopyrite structure epilayers grown on GaAs(001) substrates to determine valence band discontinuities, ΔEv, at the heterointerfaces. The values of ΔEv were estimated to be about 1.2 eV for CuAlS2/GaAs, 1.0 eV for CuAlSe2/GaAs, 1.1 eV for CuGaS2/GaAs and 0.3 eV for CuGaSe2/GaAs. From these values and bandgap energies of the corresponding compounds, Cu(Al,Ga)(S,Se)2 system is considered to offer the TYPE-I heterostructures between the corresponding narrow bandgap materials and wide bandgap ones.",

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