Experimental demonstration of resonant spin-orbit interaction effect

Yoji Kunihashi, Makoto Kohda, Junsaku Nitta

Research output: Contribution to journalConference articlepeer-review

Abstract

We investigated the spin lifetime in gate-fitted InGaAs narrow wires by magnetotransport measurement. By applying positive gate bias voltage, the spin lifetime in narrow wires became more than one order longer than those obtained from a Hall bar sample with two-dimensional electron gas. By comparison with a theoretical model of the quasi one-dimensional transport, it is found that this enhancement of spin lifetime in gated wires is due to dimensional confinement and resonant spin-orbit interaction effect by gate bias modulation of the Rashba spin-orbit interaction. Spin relaxation due to the cubic Dresselhaus term is negligible in the present InGaAs wires.

Original languageEnglish
Pages (from-to)1261-1266
Number of pages6
JournalPhysics Procedia
Volume3
Issue number2
DOIs
Publication statusPublished - 2010 Jan 31
Event14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 - Senda, Japan
Duration: 2009 Jul 132009 Jul 17

Keywords

  • Quantum wire
  • Spin-orbit interaction
  • Weak antilocalization

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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