Experimental demonstration and analysis of high performance and low 1/f noise Tri-gate MOSFETs by optimizing device structure

Weitao Cheng, Akinobu Teramoto, Tadahiro Ohmi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this paper, we experimentally investigate the performance of multi-gate MOSFETs (MUGFETs) using the advanced radical gate oxide and the accumulation-mode (AM) FD-SOI MOSFETs. Firstly, we experimentally demonstrate that the drain current in AM multi-gate MOSFET is improved about 1.3 times compared with conventional inversion-mode (IM) MOSFETs with the same gate oxide. Secondly, we indicate that 1/f noise levels in AM MUGFETs are obviously suppressed compared with the conventional IM MUGFETs. The advantages resulted from the AM device structure for MUGFETs are demonstrated in this experiment.

Original languageEnglish
Pages (from-to)1786-1788
Number of pages3
JournalMicroelectronic Engineering
Volume86
Issue number7-9
DOIs
Publication statusPublished - 2009 Jul 1

Keywords

  • 1/f Noise
  • Accumulation-mode
  • Multi-gate MOSFETs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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